88 research outputs found

    Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

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    We have applied a slow positron beam to study InN samples grown by metal-organic vapor-phase epitaxy with different V/III molar ratios (3300–24 000) and at different growth temperatures (550–625°C). Indium vacancies were identified in samples grown at V/III ratios below 4000. Their concentration is in the 10exp17cm−3 range. No strong dependence of vacancy concentration on the molar ratio was observed. At low V/III ratios, however, In droplets and vacancy clusters are formed near the substrate interface. The elevated growth temperature enhances the In vacancy formation, possibly due to limited sticking of In on the growth surface close to the decomposition temperature.Peer reviewe

    Temperature-induced topological phase transition in HgTe quantum wells

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    We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field BcB_c is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of BcB_c, we directly extract the critical temperature TcT_c, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.Comment: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted

    Temperature-driven single-valley Dirac fermions in HgTe quantum wells

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    We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dcd_c. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than dcd_c evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of 5.6×1055.6\times10^5 m×\timess−1^{-1}. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters.Comment: 5 pages, 3 figures and Supplemental Materials (4 pages

    Temperature-dependent magnetospectroscopy of HgTe quantum wells

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    We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells

    Natural Nuclear Reactor Oklo and Variation of Fundamental Constants Part 1: Computation of Neutronics of Fresh Core

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    Using modern methods of reactor physics we have performed full-scale calculations of the natural reactor Oklo. For reliability we have used recent version of two Monte Carlo codes: Russian code MCU REA and world wide known code MCNP (USA). Both codes produce similar results. We have constructed a computer model of the reactor Oklo zone RZ2 which takes into account all details of design and composition. The calculations were performed for three fresh cores with different uranium contents. Multiplication factors, reactivities and neutron fluxes were calculated. We have estimated also the temperature and void effects for the fresh core. As would be expected, we have found for the fresh core a significant difference between reactor and Maxwell spectra, which was used before for averaging cross sections in the Oklo reactor. The averaged cross section of Sm-149 and its dependence on the shift of resonance position (due to variation of fundamental constants) are significantly different from previous results. Contrary to results of some previous papers we find no evidence for the change of the fine structure constant in the past and obtain new, most accurate limits on its variation with time: -4 10^{-17}year^{-1} < d alpha/dt/alpha < 3 10^{-17} year^{-1} A further improvement in the accuracy of the limits can be achieved by taking account of the core burnup. These calculations are in progress.Comment: 25 pages, 14 figures, 12 tables, minor corrections, typos correcte

    FFAT motif phosphorylation controls formation and lipid transfer function of inter‐organelle contacts

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    Organelles are physically connected in membrane contact sites. The endoplasmic reticulum possesses three major receptors, VAP‐A, VAP‐B, and MOSPD2, which interact with proteins at the surface of other organelles to build contacts. VAP‐A, VAP‐B, and MOSPD2 contain an MSP domain, which binds a motif named FFAT (two phenylalanines in an acidic tract). In this study, we identified a non‐conventional FFAT motif where a conserved acidic residue is replaced by a serine/threonine. We show that phosphorylation of this serine/threonine is critical for non‐conventional FFAT motifs (named Phospho‐FFAT) to be recognized by the MSP domain. Moreover, structural analyses of the MSP domain alone or in complex with conventional and Phospho‐FFAT peptides revealed new mechanisms of interaction. Based on these new insights, we produced a novel prediction algorithm, which expands the repertoire of candidate proteins with a Phospho‐FFAT that are able to create membrane contact sites. Using a prototypical tethering complex made by STARD3 and VAP, we showed that phosphorylation is instrumental for the formation of ER‐endosome contacts, and their sterol transfer function. This study reveals that phosphorylation acts as a general switch for inter‐organelle contacts

    Temperature Dependent Zero-Field Splittings in Graphene

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    Graphene is a quantum spin Hall insulator with a 45 Ό\mueV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene.Comment: Main text with figures (20 pages) and Supplementary Information (14 pages) Accepted in Phys. Rev.
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