101 research outputs found

    Identity crisis in pulmonary arterial hypertension

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    International audiencePulmonary arterial hypertension (PAH) shares many hallmarks with cancer. Cancer cells acquire their hallmarks by a pathological Darwinian evolution process built on the so-called cancer cell ''identity crisis.'' Here we demonstrate that PAH shares the most striking features of the cancer identity crisis: the ectopic expression of normally silent tissue-specific genes

    Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

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    We have applied a slow positron beam to study InN samples grown by metal-organic vapor-phase epitaxy with different V/III molar ratios (3300–24 000) and at different growth temperatures (550–625°C). Indium vacancies were identified in samples grown at V/III ratios below 4000. Their concentration is in the 10exp17cm−3 range. No strong dependence of vacancy concentration on the molar ratio was observed. At low V/III ratios, however, In droplets and vacancy clusters are formed near the substrate interface. The elevated growth temperature enhances the In vacancy formation, possibly due to limited sticking of In on the growth surface close to the decomposition temperature.Peer reviewe

    Temperature-induced topological phase transition in HgTe quantum wells

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    We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field BcB_c is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of BcB_c, we directly extract the critical temperature TcT_c, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.Comment: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted

    Characterization of the blue emission of Tm/Er co-implanted GaN

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    Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples

    Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zincblende phase

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    Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings, and RGB multilayered image reconstructions allows to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zincblende (zb) volumes, which acts as the intermediate phase between the initial InN-w and the most stable cubic In2O3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason of the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.Comment: 18 pages 7 figure

    Temperature-driven single-valley Dirac fermions in HgTe quantum wells

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    We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dcd_c. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than dcd_c evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of 5.6×1055.6\times10^5 m×\timess1^{-1}. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters.Comment: 5 pages, 3 figures and Supplemental Materials (4 pages

    Temperature-dependent magnetospectroscopy of HgTe quantum wells

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    We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells

    Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

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    The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps provide good protection up to annealing temperatures of at least 1300 degrees C, but show localized failure in the form of irregularly shaped holes with a lateral size of 1-2 µm which extend through the cap into the GaN layer beneath. Compositional micrographs, obtained using wavelength dispersive x-ray analysis, suggest that these holes form when GaN dissociates and ejects through cracks already present in the as-grown AlN caps due to the large lattice mismatch between the two materials. Implantation damage enhances the formation of the holes during annealing. Simultaneous room temperature cathodoluminescence mapping showed that the Eu luminescence is reduced in N-poor regions. Hence, exposed GaN dissociates first by outdiffusion of nitrogen through AlN cracks, thereby opening a hole in the cap through which Ga subsequently evaporates
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