Enhanced gradient crystal-plasticity study of size effects in a β-titanium alloy

A calibrated model of enhanced strain-gradient crystal plasticity is proposed, which is shown to characterize adequately deformation behaviour of b.c.c. single crystals of a β-Ti alloy (Ti-15-3-3-3). In this model, in addition to strain gradients evolving in the course of deformation, incipient strain gradients, related to a component's surface-to-volume ratio, is accounted for. Predictive capabilities of the model in characterizing a size effect in an initial yield and a work-hardening rate in small-scale components is demonstrated. The characteristic length-scale, i.e. the component's dimensions below which the size effect is observed, was found to depend on densities of polar and statistical dislocations and interaction between them

Compression of Nanowires Using a Flat Indenter: Diametrical Elasticity Measurement

A new experimental approach for the characterization of the diametrical elastic modulus of individual nanowires is proposed by implementing a micro/nanoscale diametrical compression test geometry, using a flat punch indenter. A 250 nm diameter single crystal silicon nanowire is compressed inside of a scanning electron microscope. Since silicon is highly anisotropic, the wire crystal orientation in the compression axis is determined by electron backscatter diffraction. In order to analyze the load-displacement compression data, a two-dimensional analytical closed-form solution based on a classical contact model is proposed. The results of the analytical model are compared with those of finite element simulations and to the experimental diametrical compression results and show good agreement

Compression of Nanowires Using a Flat Indenter: Diametrical Elasticity Measurement

A new experimental approach for the characterization of the diametrical elastic modulus of individual nanowires is proposed by implementing a micro/nanoscale diametrical compression test geometry, using a flat punch indenter. A 250 nm diameter single crystal silicon nanowire is compressed inside of a scanning electron microscope. Since silicon is highly anisotropic, the wire crystal orientation in the compression axis is determined by electron backscatter diffraction. In order to analyze the load-displacement compression data, a two-dimensional analytical closed-form solution based on a classical contact model is proposed. The results of the analytical model are compared with those of finite element simulations and to the experimental diametrical compression results and show good agreement