Magnetism in 2D BN1−x_{1-x}Ox_x and B1−x_{1-x}Six_xN: polarized itinerant and local electrons

We use density functional theory based first-principles methods to study the magnetism in a 2D hexagonal BN sheet induced by the different concentrations of oxygen and silicon atoms substituting for nitrogen (O$_\mathrm{N}$) and boron (Si$_\mathrm{B}$) respectively. We demonstrate the possible formation of three distinct phases based on the magnetization energy calculated self-consistently for the ferromagnetic (ME$_{\mathrm{FM}}$) and antiferromagnetic (ME$_{\mathrm{AFM}}$) states, i.e. the paramagnetic phase with ME$_{\mathrm{FM}}$=ME$_{\mathrm{AFM}}$, the ferromagnetic phase with ME$_{\mathrm{FM}}$$>$ME$_{\mathrm{AFM}}$ and finally the polarized itinerant electrons with finite ME$_{\mathrm{FM}}$ but zero ME$_{\mathrm{AFM}}$. While the O$_\mathrm{N}$ system was found to exist in all three phases, no tendency towards the formation of the polarized itinerant electrons was observed for the Si$_\mathrm{B}$ system though the existence of the other two phases was ascertained. The different behavior of these two systems is associated with the diverse features in the magnetization energy as a function of the oxygen and silicon concentrations. Finally, the robustness of the polarized itinerant electron phase is also discussed with respect to the O substitute atom distributions and the applied strains to the system.Comment: accepted by RP

Ab initio Studies of the Possible Magnetism in BN Sheet by Non-magnetic Impurities and Vacancies

We performed first-principles calculations to investigate the possible magnetism induced by the different concentrations of non-magnetic impurities and vacancies in BN sheet. The atoms of Be, B, C, N, O, Al and Si are used to replace either B or N in the systems as impurities. We discussed the changes in density of states as well as the extent of the spatial distributions of the defect states, the possible formation of magnetic moments, the magnitude of the magnetization energies and finally the exchange energies due to the presence of these defects. It is shown that the magnetization energies tend to increase as the concentrations of the defects decreases in most of the defect systems which implies a definite preference of finite magnetic moments. The calculated exchange energies are in general tiny but not completely insignificant for two of the studied defect systems, i.e. one with O impurities for N and the other with B vacancies.Comment: 8 pages, 10 figures, submitted to Phys. Rev.

Role of Bell Singlet State in the Suppression of Disentanglement

The stability of entanglement of two atoms in a cavity is analyzed in this work. By studying the general Werner states we clarify the role of Bell-singlet state in the problem of suppression of disentanglement due to spontaneous emission. It is also shown explicitly that the final amount of entanglement depends on the initial ingredients of the Bell-singlet state.Comment: 5 pages, 2 figures, accepted by Phys. Rev.

Vertically-aligned graphene nanowalls grown via plasma-enhanced chemical vapor deposition as a binder-free cathode in Li-O_2 batteries

In the present report, vertically-aligned graphene nanowalls are grown on Ni foam (VA-G/NF) using plasma-enhanced chemical vapor deposition method at room temperature. Optimization of the growth conditions provides graphene sheets with controlled defect sites. The unique architecture of the vertically-aligned graphene sheets allows sufficient space for the ionic movement within the sheets and hence enhancing the catalytic activity. Further modification with ruthenium nanoparticles (Ru NPs) drop-casted on VA-G/NF improves the charge overpotential for lithium–oxygen (Li–O_2) battery cycles. Such reduction we believe is due to the easier passage of ions between the perpendicularly standing graphene sheets thereby providing ionic channels

Vertically-aligned graphene nanowalls grown via plasma-enhanced chemical vapor deposition as a binder-free cathode in Li-O_2 batteries

In the present report, vertically-aligned graphene nanowalls are grown on Ni foam (VA-G/NF) using plasma-enhanced chemical vapor deposition method at room temperature. Optimization of the growth conditions provides graphene sheets with controlled defect sites. The unique architecture of the vertically-aligned graphene sheets allows sufficient space for the ionic movement within the sheets and hence enhancing the catalytic activity. Further modification with ruthenium nanoparticles (Ru NPs) drop-casted on VA-G/NF improves the charge overpotential for lithium–oxygen (Li–O_2) battery cycles. Such reduction we believe is due to the easier passage of ions between the perpendicularly standing graphene sheets thereby providing ionic channels

Generation and Evolution of Spin Entanglement in NRQED

A complete analysis on the generation of spin entanglement from NRQED is presented. The results of entanglement are obtained with relativistic correction to the leading order of (v/c)^2. It is shown that to this order the degree of entanglement of a singlet state does not change under time evolution whereas the triplet state can change.Comment: 8 pages, 1 figure, to appear in Phys. Rev.

Pressure-Controlled Chemical Vapor Deposition of Graphene as Catalyst for Solar Hydrogen Evolution Reaction

In the present report, graphene-based catalysts on silicon substrate have been examined as the photocathode for solar hydrogen evolution reaction (HER). Mono-layered graphene has been synthesized through low-pressure chemical vapor deposition (LPCVD), whereas multi-layered graphene has been synthesized by atmospheric pressure chemical vapor deposition (APCVD). Copper foil is used as the substrate. The graphene layer on Cu foil subsequently transferred on to silicon photoabsorber using poly(methyl-2-methylpropenoate) (PMMA). At the initial linear sweep voltammetry (LSV) scan, LPCVD-synthesized graphene-Si (LPCVD-Si) electrode showed an onset potential of −0.65 V and photocurrent of −4.31 mA cm^(−2) (at −0.385 V). On the contrary, the onset potential and photocurrent of APCVD-prepared graphene-Si (APCVD-Si) photocathode are −0.36 V and −28.28 mA cm^(−2) (at −0.385 V), respectively. After the 130th LSV scan, the onset potential and photocurrent of LPCVD-Si improved to −0.39 V and −13.28 mA cm^(−2) (at −0.385 V), respectively. In addition, the onset potential and photocurrent of APCVD-Si photocathode at the LSV 130th scan are enhanced to −0.36 V and −28.28 mA cm^(−2) (at −0.385 V), respectively. The graphene sample grown via LPCVD-Si show stable performance whereas, the graphene obtained via APCVD-Si have higher photocurrent poor stability