Electronic structure of Ca1−x_{1-x}Srx_xVO3_3: a tale of two energy-scales

We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to understand properties related to two vastly differing energy-scales, namely the low energy-scale of thermal excitations (~$k_{B}T$) and the high-energy scale related to Coulomb and other electronic interactions.Comment: 4 pages and 3 figures. Europhysics Letters (appearing

Non-volatile resistive switching in dielectric superconductor YBCO

We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/Au system. We show that the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. The possible origin of the switching effect may be the migration of oxygen or metallic ions along the grain boundaries that control the intergrain superconducting coupling. Four-wire bulk resistance measurements reveal that the migration is not restricted to interfaces and produce significant bulk effects.Comment: 4 pages, 4 figures, corresponding author: C. Acha ([email protected]

DNA computing by blocking

AbstractWe present a method for molecular computing which relies on blocking (inactivating) this part of the total library of molecules that does not contribute to (finding) a solution—this happens essentially in one biostep (after the input has been read). The method is explained by presenting a DNA based algorithm for solving (albeit in the theoretical sense only!) the satisfiability problem

The Finite Temperature Mott Transition in the Hubbard Model in Infinite Dimensions

We study the second order finite temperature Mott transition point in the fully frustrated Hubbard model at half filling, within Dynamical Mean Field Theory. Using quantum Monte Carlo simulations we show the existence of a finite temperature second order critical point by explicitly demonstrating the existence of a divergent susceptibility as well as by finding coexistence in the low temperature phase. We determine the location of the finite temperature Mott critical point in the (U,T) plane. Our study verifies and quantifies a scenario for the Mott transition proposed in earlier studies (Reviews of Modern Physics 68, 13, 1996) of this problem.Comment: 4 RevTex pages, uses epsf, 2 figure

Enhanced and continuous electrostatic carrier doping on the SrTiO3_{3} surface

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.Comment: Supplementary Information: <http://www.nature.com/srep/2013/130424/srep01721/extref/srep01721-s1.pdf

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.Comment: 4 pages, 2 figure

Quantum and thermal fluctuations in the SU(N) Heisenberg spin-glass model near the quantum critical point

We solve for the SU(N) Heisenberg spin-glass in the limit of large N focusing on small S and T. We study the effect of quantum and thermal fluctuations in the frequency dependent response function and observed interesting transfers of spectral weight. We compute the T-dependence of the order parameter and the specific heat and find an unusual T^2 behavior for the latter at low temperatures in the spin-glass phase. We find a remarkable qualitative agreement with various experiments on the quantum frustrated magnet SrCr_{9p}Ga_{12-9p}O_{19}.Comment: 5 pages, 4 figures, submitted to Phys. Rev. Let

Monetary compensations in climate policy through the lens of a general equilibrium assessment The case of oil-exporting countries

International audienceThis paper investigates the compensations that major oil producers have claimed for since the Kyoto Protocol in order to alleviate the adverse impacts of climate policy on their economies. The amount of these adverse impacts is assessed through a general equilibrium model which endogenizes both the reduction of oil exportation revenues under international climate policy and the macroeconomic effect of carbon pricing on Middle-East's economy. We show that compensating the drop of exportation revenues does not offset GDP and welfare losses because of the time profile of the general equilibrium effects. When considering instead compensation based on GDP losses, the effectiveness of monetary transfers proves to be drastically limited by general equilibrium effects in opened economies. The main channels of this efficiency gap are investigated and its magnitude proves to be conditional upon strategic and policy choices of the Middle-East. This leads us to suggest that other means than direct monetary compensating transfers should be discussed to engage the Middle-East in climate policies

A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3

Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina