Effect of stoichiometry on oxygen incorporation in MgB2 thin films

The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg rich films and in films exposed to humid atmospheres.Comment: 10 pages, 6 figures, 1 tabl

Topological Qubit Design and Leakage

We examine how best to design qubits for use in topological quantum computation. These qubits are topological Hilbert spaces associated with small groups of anyons. Op- erations are performed on these by exchanging the anyons. One might argue that, in order to have as many simple single qubit operations as possible, the number of anyons per group should be maximized. However, we show that there is a maximal number of particles per qubit, namely 4, and more generally a maximal number of particles for qudits of dimension d. We also look at the possibility of having topological qubits for which one can perform two-qubit gates without leakage into non-computational states. It turns out that the requirement that all two-qubit gates are leakage free is very restrictive and this property can only be realized for two-qubit systems related to Ising-like anyon models, which do not allow for universal quantum computation by braiding. Our results follow directly from the representation theory of braid groups which means they are valid for all anyon models. We also make some remarks on generalizations to other exchange groups.Comment: 13 pages, 3 figure

Zurek-Kibble Mechanism for the Spontaneous Vortex Formation in Nb−Al/Alox/NbNb-Al/Al_{ox}/Nb Josephson Tunnel Junctions: New Theory and Experiment

New scaling behavior has been both predicted and observed in the spontaneous production of fluxons in quenched $Nb-Al/Al_{ox}/Nb$ annular Josephson tunnel junctions as a function of the quench time, $\tau_{Q}$. The probability $f_{1}$ to trap a single defect during the N-S phase transition clearly follows an allometric dependence on $\tau_{Q}$ with a scaling exponent $\sigma = 0.5$, as predicted from the Zurek-Kibble mechanism for {\it realistic} JTJs formed by strongly coupled superconductors. This definitive experiment replaces one reported by us earlier, in which an idealised model was used that predicted $\sigma = 0.25$, commensurate with the then much poorer data. Our experiment remains the only condensed matter experiment to date to have measured a scaling exponent with any reliability.Comment: Four pages, one figur

Spontaneous Fluxon Production in Annular Josephson Tunnel Junctions in the Presence of a Magnetic Field

We report on the spontaneous production of fluxons in the presence of a symmetry-breaking magnetic field for annular Josephson tunnel junctions during a thermal quench. The dependence on field intensity $B$ of the probability $\bar{f_1}$ to trap a single defect during the N-S phase transition drastically depends on the sample circumferences. We show that the data can be understood in the framework of the Kibble-Zurek picture of spontaneous defect formation controlled by causal bounds.Comment: Submitted to Phys. Rev. B with 5 figures on Nov. 15, 200

Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schroedinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.Comment: 4pgs, 3 fig

Critical Current Density and Resistivity of MgB2 Films

The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the "reduced effective area" argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.Comment: 11 pages, 3 figure

Nanoscale grains, high irreversibility field, and large critical current density as a function of high energy ball milling time in C-doped magnesium diboride

Magnesium diboride (MgB2) powder was mechanically alloyed by high energy ball milling with C to a composition of Mg(B0.95C0.05)2 and then sintered at 1000 C in a hot isostatic press. Milling times varied from 1 minute to 3000 minutes. Full C incorporation required only 30-60 min of milling. Grain size of sintered samples decreased with increased milling time to less than 30 nm for 20-50 hrs of milling. Milling had a weak detrimental effect on connectivity. Strong irreversibility field (H*) increase (from 13.3 T to 17.2 T at 4.2 K) due to increased milling time was observed and correlated linearly with inverse grain size (1/d). As a result, high field Jc benefited greatly from lengthy powder milling. Jc(8 T, 4.2 K) peaked at > 80,000 A/cm2 with 1200 min of milling compared with only ~ 26,000 A/cm2 for 60 min of milling. This non-compositional performance increase is attributed to grain refinement of the unsintered powder by milling, and to the probable suppression of grain growth by milling-induced MgO nano-dispersions.Comment: 12 pages, 11 figure

New Experiments for Spontaneous Vortex Formation in Josephson Tunnel Junctions

It has been argued by Zurek and Kibble that the likelihood of producing defects in a continuous phase transition depends in a characteristic way on the quench rate. In this paper we discuss an improved experiment for measuring the Zurek-Kibble scaling exponent $\sigma$ for the production of fluxons in annular symmetric Josephson Tunnel Junctions. We find $\sigma \simeq 0.5$. Further, we report accurate measurements of the junction gap voltage temperature dependence which allow for precise monitoring of the fast temperature variations during the quench.Comment: 12 pages, 5 figures, submitted to Phys. Rev.

Effect of oxygen incorporation on normal and superconducting properties of MgB2 films

Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is distributed both within and between the grains. High values of critical current densities in field (~4x10^5 A/cm^2 at 8 T and 4.2 K), extrabolated critical fields (>45 T) and slopes of critical field versus temperature (1.4 T/K) are observed. Our results suggest that low growth temperatures (300oC) and oxygen doping (>0.65%) can produce MgB2 with high Jc values in field and Hc2 for high-field magnet applications.Comment: 10 pages, 3 figure

Observation of band structure and density of states effects in Co-based magnetic tunnel junctions

Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one fcc(111) textured and one polycrystalline (poly-phase and poly-directional) Co electrode, a strong asymmetry is observed in the magnetotransport properties, while when both electrodes are polycrystalline the magnetotransport is essentially symmetric. These observations are successfully explained within a model based on ballistic tunneling between the calculated band structures (DOS) of fcc-Co and hcp-Co.Comment: 4 pages, 3 figures, submitted to Phys. Rev. Let