Electronic reconstruction and enhanced superconductivity at La1.6−x_{1.6-x}Nd0.4_{0.4}Srx_{x}CuO4_{4}/La1.55_{1.55}Sr0.45_{0.45}CuO4_{4} bilayer interface

We report enhanced superconductivity in bilayer thin films consisting of superconducting La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_{4}$ with 0.06 $\leq x<$ 0.20 and metallic but non-superconducting La$_{1.55}$Sr$_{0.45}$CuO$_{4}$. These bilayers show a maximum increase in superconducting transition temperature ($T_c$) of more than 200% for $x$ = 0.06 while no change in $T_c$ is observed for the bilayers with $x\geq$ 0.20. The analysis of the critical current and kinetic inductance data suggests 2-3 unit cells thick interfacial layer electronically perturbed to have a higher $T_c$. A simple charge transfer model with cation intermixing explains the observed $T_c$ in bilayers. Still the unusually large thickness of interfacial superconducting layers can not be explained in terms of this model. We believe the stripe relaxation as well as the proximity effect also influence the superconductivity of the interface

Strain induced magnetic domain evolution and spin re-orientation transition in epitaxial manganite films

The evolution of magnetic domain structure in epitaxial La$_{0.625}$Ca$_{0.375}$MnO$_3$ films on (001) NdGaO$_3$ is monitored as a function of temperature and magnetic field using Magnetic Force Microscopy. We see two distinct regions of magnetic orientational order; one in-plane displaying contrast-less image and the other tilted away from the film plane forming a distinct stripe pattern. A strong domain splitting is observed at the boundary of two regions, which is resilient to reorientation with temperature and magnetic field. We propose a model magnetic free energy functional to explain the mechanism of domain splitting seen in manganite films

The peroxisome: a production in four acts

A cell regulates the number, size, and kind of each organelle it possesses in response to its particular role in an environment or tissue. Yet we still know little about how the molecular signaling networks within each cell perform such regulation. In this issue, Saleem et al. (Saleem, R.A., B. Knoblach, F.D. Mast, J.J. Smith, J. Boyle, C.M. Dobson, R. Long-O'Donnell, R.A. Rachubinski, and J.D. Aitchison. 2008. J. Cell Biol. 181:281–292) show for the first time how groups of kinases and phosphatases are organized to control when and how a cell assembles one kind of organelle, the peroxisome

Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO3_3 interface

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications

Interface superconductivity in La1.48_{1.48}Nd0.4_{0.4}Sr0.12_{0.12}CuO4_{4}/La1.84_{1.84}Sr0.16_{0.16}CuO4_{4} bilayers

We identify a distinct superconducting phase at the interface of a La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (LNSCO)/La$_{1.84}$Sr$_{0.16}$CuO$_4$ (LSCO) epitaxial bilayer system using ac screening measurements. A model based on inter-diffusion of quasiparticles and condensate at the interface yields a thickness of $\sim$ 25 nm for the interfacial layer. Two-dimensional superconductivity of the interface layer appears to be governed by Kosterlitz-Thouless-Berezinskii transition. A parallel magnetic field suppresses the superconducting transition temperature of this layer with a pair breaking parameter $\alpha$ varying as $H^2$