An Analysis Of Multiple Size Region Of Interest In Disparity Mapping For Stereo Vision Application

This paper presents an analysis of multiple size region of interest in selected area or segment of disparity mapping in application of stereo vision. The mapping is about to deal with the intensities of pixels which allocate the depths of an image and can be extracted to get the distance values. This region is a reference view of the stereo camera and stereo vision baseline is based on horizontal configuration. The block matching technique is briefly described with the performance of its output. The disparity mapping is generated by the algorithm with the reference to the left image coordinate. The algorithm uses Sum of Absolute Differences (SAD) which is developed using Matlab software. The rectification and block matching processes are also briefly described in this paper

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells