Electronic States in Silicon Quantum Dots: Multivalley Artificial Atoms

Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In consequence electrons occupy the lowest level in different valleys in the absence of Hund's coupling when the dot size is less than 10 nm. High-spin states are easily realized by applying a small magnetic field. (ii) When the dot size is much larger, the electron-electron interaction becomes relevant in determining the electronic states. Electrons are accommodated in a valley, making the highest spin, to gain the exchange energy. (iii) In the presence of intervalley scattering, degenerate levels in different valleys are split. This could result in low-spin states. These spin states in multivalley artificial atoms can be observed by looking at the magnetic-field dependence of peak positions in the Coulomb oscillation.Comment: 18 pages, 5 figure

Magnetically-induced reconstructions of the ground state in a few-electron Si quantum dot

We report unexpected fluctuations in the positions of Coulomb blockade peaks at high magnetic fields in a small Si quantum dot. The fluctuations have a distinctive saw-tooth pattern: as a function of magnetic field, linear shifts of peak positions are compensated by abrupt jumps in the opposite direction. The linear shifts have large slopes, suggesting formation of the ground state with a non-zero angular momentum. The value of the momentum is found to be well defined, despite the absence of the rotational symmetry in the dot.Comment: 5 pages, 4 figures, accepted to PR

Double-dot charge transport in Si single electron/hole transistors

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.Comment: 4 pages, 5 figures, to appear in Appl. Phys. Let

Highly skewed current-phase relation in superconductor-topological insulator-superconductor Josephson junctions

Three-dimensional topological insulators (TI's) in proximity with superconductors are expected to exhibit exotic phenomena such as topological superconductivity (TSC) and Majorana bound states (MBS), which may have applications in topological quantum computation. In superconductor-TI-superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, referred to as the current-phase relation (CPR), reveals important information including the nature of the superconducting transport. Here, we study the induced superconductivity in gate-tunable Josephson junctions (JJs) made from topological insulator BiSbTeSe2 with superconducting Nb electrodes. We observe highly skewed (non-sinusoidal) CPR in these junctions. The critical current, or the magnitude of the CPR, increases with decreasing temperature down to the lowest accessible temperature (T ~ 20 mK), revealing the existence of low-energy modes in our junctions. The gate dependence shows that close to the Dirac point the CPR becomes less skewed, indicating the transport is more diffusive, most likely due to the presence of electron/hole puddles and charge inhomogeneity. Our experiments provide strong evidence that superconductivity is induced in the highly ballistic topological surface states (TSS) in our gate-tunable TI- based JJs. Furthermore, the measured CPR is in good agreement with the prediction of a model which calculates the phase dependent eigenstate energies in our system, considering the finite width of the electrodes as well as the TSS wave functions extending over the entire circumference of the TI