A Surface Photovoltage Study of Surface Defects on Co-Doped TiO2 Thin Films Deposited by Spray Pyrolysis

Surface photovoltage (SPV) spectroscopy is a powerful tool for studying electronic defects on semiconductor surfaces, at interfaces, and in bulk for a wide range of materials. Undoped and Cobalt-doped TiO2 (CTO) thin films were deposited on Crystalline Silicon (c-Si) and Flourine doped Tin oxide (SnO2:F) substrates by chemical spray pyrolysis at a substrate temperature of 400 °C. The concentration of the Co dopant in the films was determined by Rutherford backscattering spectrometry and ranged between 0 and 4.51 at %. The amplitude of the SPV signals increased proportionately with the amount of Co in the films, which was a result of the enhancement of the slow processes of charge separation and recombination. Photogenerated holes were trapped at the surface, slowing down the time response and relaxation of the samples. The surface states were effectively passivated by a thin In2S3 over-layer sprayed on top of the TiO2 and CTO films

Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10−6 and 3.2 × 10−5 cm2/s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers

Improved Light Soaking and Thermal Stability of Organic Solar Cells by Robust Interfacial Modification

The most widely used material in electron transport layers (ETL) of inverted organic solar cells (iOSCs) is zinc oxide (ZnO). However, the brittleness, inorganic nature, surface defects, and photocatalytic activity of ZnO lead to poor stability in iOSCs. Herein, the light‐soaking and thermal stability of iOSCs are substantially improved by modifying ZnO surface with polyurethane diacrylate (SAR) or urethane acrylate (OCS)‐based ultraviolet (UV) resins. The UV resins significantly reduce the energy barrier, suppress surface defects, and improve interfacial contact between ZnO ETL and the organic photoactive layer. Notably, the SAR and OCS resins mitigate the photocatalytic activity of ZnO, electrical leakage, and interfacial resistance during photoaging of OSCs. As a result, iOSCs based on modified ZnOs retain over 80% of initial efficiency under 1 sun illumination for light soaking 1000 h. Furthermore, SAR and OCS resins on ZnO surfaces form a robust crosslinked network with excellent solvent resistant properties, which result in enhanced thermal stability. These results reveal that this simple and effective approach is a promising procedure to fabricate high‐performance iOSCs