949 research outputs found
Active multilayer mirrors for reflectance tuning at extreme ultraviolet (EUV) wavelengths
We propose an active multilayer mirror structure for EUV wavelengths
which can be adjusted to compensate for reflectance changes. The multilayer structure tunes the reflectance via an integrated piezoelectric layer that can change its dimension due to an externally applied voltage. Here, we present design and optimization of the mirror structure for maximum reflectance tuning. In addition, we present preliminary results showing that the deposition of piezoelectric thin films with the requisite layer smoothness and crystal structure are possible. Finally, polarization switching of the smoothest piezoelectric film is presented
Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films
Detailed analysis of transport, magnetism and x-ray absorption spectroscopy
measurements on ultrathin La0.7Sr0.3MnO3 films with thicknesses from 3 to 70
unit cells resulted in the identification of a lower critical thickness for a
non-metallic, non-ferromagnetic layer at the interface with the SrTiO3 (001)
substrate of only 3 unit cells (~12 Angstrom). Furthermore, linear dichroism
measurements demonstrate the presence of a preferred (x2-y2) in-plane orbital
ordering for all layer thicknesses without any orbital reconstruction at the
interface. A crucial requirement for the accurate study of these ultrathin
films is a controlled growth process, offering the coexistence of
layer-by-layer growth and bulk-like magnetic/transport properties.Comment: 22 pages, 6 figures, accepted for publication in Physical Review
Determination of the spin-flip time in ferromagnetic SrRuO3 from time-resolved Kerr measurements
We report time-resolved Kerr effect measurements of magnetization dynamics in
ferromagnetic SrRuO3. We observe that the demagnetization time slows
substantially at temperatures within 15K of the Curie temperature, which is ~
150K. We analyze the data with a phenomenological model that relates the
demagnetization time to the spin flip time. In agreement with our observations
the model yields a demagnetization time that is inversely proportional to T-Tc.
We also make a direct comparison of the spin flip rate and the Gilbert damping
coefficient showing that their ratio very close to kBTc, indicating a common
origin for these phenomena
Admixtures to d-wave gap symmetry in untwinned YBa2Cu3O7 superconducting films measured by angle-resolved electron tunneling
We report on an \textit{ab}-anisotropy of and in
ramp-edge junctions between untwinned YBaCuO and % -wave
Nb. For these junctions, the angle with the YBaCuO
crystal b-axis is varied as a single parameter. The
A()-dependence presents 2-fold symmetry. The minima in
at suggest a real s-wave subdominant
component and negligible -wave or imaginary s-wave admixtures. The
()-dependence is well-fitted by 83% -, 15%
isotropic - and 2% anisotropic s-wave order parameter symmetry, consistent
with .Comment: 4 pages, 3 figures, to be published in Physical Review Letter
Electronically coupled complementary interfaces between perovskite band insulators
Perovskite oxides exhibit a plethora of exceptional electronic properties,
providing the basis for novel concepts of oxide-electronic devices. The
interest in these materials is even extended by the remarkable characteristics
of their interfaces. Studies on single epitaxial connections between the two
wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either
high-mobility electron conductors or insulating, depending on the atomic
stacking sequences. In the latter case they are conceivably positively charged.
For device applications, as well as for basic understanding of the interface
conduction mechanism, it is important to investigate the electronic coupling of
closely-spaced complementary interfaces. Here we report the successful
realization of such electronically coupled complementary interfaces in SrTiO3 -
LaAlO3 thin film multilayer structures, in which the atomic stacking sequence
at the interfaces was confirmed by quantitative transmission electron
microscopy. We found a critical separation distance of 6 perovskite unit cell
layers, corresponding to approximately 2.3 nm, below which a decrease of the
interface conductivity and carrier density occurs. Interestingly, the high
carrier mobilities characterizing the separate electron doped interfaces are
found to be maintained in coupled structures down to sub-nanometer interface
spacing
Local probing of coupled interfaces between two-dimensional electron and hole gases in oxide heterostructures by variable-temperature scanning tunneling spectroscopy
The electronic structure of an epitaxial oxide heterostructure containing two spatially separated two-dimensional conducting sheets, one electronlike (2DEG) and the other holelike (2DHG), has been investigated using variable temperature scanning tunneling spectroscopy. Heterostructures of LaAlO3/SrTiO3 bilayers on (001)-oriented SrTiO3 (STO) substrates provide the unique possibility to study the coupling between subnanometer spaced conducting interfaces. The band gap increases dramatically at low temperatures due to a blocking of the transition from the conduction band of the STO substrate to the top of the valence band of the STO capping layer. This prevents the replenishment of the depleted electrons in the capping layer from the underlying 2DEG and enables charging of the 2DHG by applying a negative sample bias voltage within the band gap region. At low temperatures the 2DHG can be probed separately with the proposed experimental geometry, although the 2DEG is located less than 1 nm belo
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