Imaging Pulsed Laser Deposition oxide growth by in-situ Atomic Force Microscopy

To visualize the topography of thin oxide films during growth, thereby enabling to study its growth behavior quasi real-time, we have designed and integrated an atomic force microscope (AFM) in a pulsed laser deposition (PLD) vacuum setup. The AFM scanner and PLD target are integrated in a single support frame, combined with a fast sample transfer method, such that in-situ microscopy can be utilized after subsequent deposition pulses. The in-situ microscope can be operated from room temperature (RT) up to 700$^\circ$C and at (process) pressures ranging from the vacuum base pressure of 10$^{-6}$ mbar up to 1 mbar, typical PLD conditions for the growth of oxide films. The performance of this instrument is demonstrated by resolving unit cell height surface steps and surface topography under typical oxide PLD growth conditions.Comment: 8 pages, 8 figure

Active multilayer mirrors for reflectance tuning at extreme ultraviolet (EUV) wavelengths

We propose an active multilayer mirror structure for EUV wavelengths which can be adjusted to compensate for reflectance changes. The multilayer structure tunes the reflectance via an integrated piezoelectric layer that can change its dimension due to an externally applied voltage. Here, we present design and optimization of the mirror structure for maximum reflectance tuning. In addition, we present preliminary results showing that the deposition of piezoelectric thin films with the requisite layer smoothness and crystal structure are possible. Finally, polarization switching of the smoothest piezoelectric film is presented

Superconducting Mg-B films by pulsed laser deposition in an in-situ two-step process using multi-component targets

Superconducting thin films have been prepared in a two-step in-situ process, using the Mg-B plasma generated by pulsed laser ablation. The target was composed of a mixture of Mg and MgB2 powders to compensate for the volatility of Mg and therefore to ensure a high Mg content in the film. The films were deposited at temperatures ranging from room temperature to 300 degrees C followed by a low-pressure in-situ annealing procedure. Various substrates have been used and diverse ways to increase the Mg content into the film were applied. The films show a sharp transition in the resistance and have a zero resistance transition temperature of 22-24 K.Comment: 4 pages, 3 figures, submitted to Applied Physics Letter

Localized Control of Curie Temperature in Perovskite Oxide Film by Capping-layer- induced Octahedral Distortion

With reduced dimensionality, it is often easier to modify the properties of ultra-thin films than their bulk counterparts. Strain engineering, usually achieved by choosing appropriate substrates, has been proven effective in controlling the properties of perovskite oxide films. An emerging alternative route for developing new multifunctional perovskite is by modification of the oxygen octahedral structure. Here we report the control of structural oxygen octahedral rotation in ultra-thin perovskite SrRuO3 films by the deposition of a SrTiO3 capping layer, which can be lithographically patterned to achieve local control. Using a scanning Sagnac magnetic microscope, we show increase in the Curie temperature of SrRuO3 due to the suppression octahedral rotations revealed by the synchrotron x-ray diffraction. This capping-layer-based technique may open new possibilities for developing functional oxide materials.Comment: Main-text 5 pages, SI 6 pages. To appear in Physical Review Letter

Characterisation of multilayer ramp-type ReBa2Cu3O7-delta structures by scanning probe microscopy and high-resolution electron microscopy

We studied the morphology of ramps in REBa2Cu3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TiN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence. Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBu2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, can even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions