Polarization Dependence of Born Effective Charge and Dielectric Constant in KNbO3_3

The Born effective charge Z^{*} and dielectric tensor \epsilon_{\infty} of KNbO_3 are found to be very sensitive to the atomic geometry, changing by as much as 27% between the paraelectric cubic and ferroelectric tetragonal and rhombohedral phases. Subtracting the bare ionic contribution reveals changes of the dynamic component of Z^{*} as large as 50%, for atomic displacements that are typically only a few percent of the lattice constant. Z^{*}, \epsilon_{\infty} and all phonon frequencies at the Brillouin zone center were calculated using the {\it ab initio} linearized augmented plane-wave linear response method with respect to the reference cubic, experimental tetragonal, and theoretically determined rhombohedral ground state structures. The ground state rhombohedral structure of KNbO_3 was determined by minimizing the forces on the relaxed atoms. By contrast with the cubic structure, all zone center phonon modes of the rhombohedral structure are stable and their frequencies are in good agreement with experiment. In the tetragonal phase, one of the soft zone center modes in the cubic phase is stablized. In view of the small atomic displacements involved in the ferroelectric transitions, it is evident that not only the soft mode frequencies but also the Born effective charge and dielectric constants are very sensitive to the atomic geometry.Comment: 26 pages, revtex, no figures; to appear in Phys. Rev. B15 (Oct.), 199

Pressure Dependence of Born Effective Charges, Dielectric Constant and Lattice Dynamics in SiC

The pressure dependence of the Born effective charge, dielectric constant and zone-center LO and TO phonons have been determined for $3C$-SiC by a linear response method based on the linearized augmented plane wave calculations within the local density approximation. The Born effective charges are found to increase nearly linearly with decreasing volume down to the smallest volume studied, $V/V_0=0.78$, corresponding to a pressure of about 0.8 Mbar. This seems to be in contradiction with the conclusion of the turnover behavior recently reported by Liu and Vohra [Phys.\ Rev.\ Lett.\ {\bf 72}, 4105 (1994)] for $6H$-SiC. Reanalyzing their procedure to extract the pressure dependence of the Born effective charges, we suggest that the turnover behavior they obtained is due to approximations in the assumed pressure dependence of the dielectric constant $\varepsilon_\infty$, the use of a singular set of experimental data for the equation of state, and the uncertainty in measured phonon frequencies, especially at high pressure.Comment: 25 pages, revtex, 5 postscript figures appended, to be published in Phys. Rev.