Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition

We report for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200°C to 680°C, epitaxial wurtzite (002) ZnS films have been successfully grown on (1012) sapphire and (001) silicon substrates. X-ray diffraction data yield full width at half maximum 2theta values of 0.13° for as-grown samples, compared with 28 values or 0.09° and 0.08° for the bare sapphire and silicon substrates respectively