Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS2_2 in a perpendicular magnetic field

We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling between the magnetic field, $B$, and the orbital magnetic moment. We show that the effective two-band Hamiltonian provides a mismatch between the valley Zeeman coupling in the conduction and valence bands due to the effective mass asymmetry and it is proportional to $B^2$ similar to the diamagnetic shift of exciton binding energies. However, the dominant term which evolves with $B$ linearly, originates from the multi-orbital and multi-band structures of the system. Besides, we investigate the transport properties of the system by calculating the spin-valley resolved conductance and show that, in a low-hole doped case, the transport channels at the edge are chiral for one of the spin components. This leads to a localization of the non-chiral spin component in the presence of disorder and thus provides a spin-valley polarized transport induced by disorder.Comment: 12 pages, 7 figures, new references are adde

Phosphorene as a nanoelectromechanical material

Based on density functional simulations combined with the Landauer transport theory, the mechanical strain impacts on the chemical bonds of phosphorene and their effects on the electronic properties are studied. Moreover, the effect of the tensile strain along the zigzag direction on the charge transport properties of a two-terminal phosphorene device is evaluated. Enhancement of the intraplanar interactions, in particular between the next-nearest neighbors in strained phosphorene, is found to be essential in the band-structure evolution. The charge transport analyzing shows that phosphorene has a strong piezoconductance sensitivity, which makes this material highly desirable for high-pressure nanoelectromechanical applications. The piezoconductance gauge factor increases by strain from 46 in 5% tension to 220 in 12% tension, which is comparable to state-of-the-art silicon strain sensors. The transmission pathways monitor the current flowing in terms of the chemical bonds and hopping, however, the transport mostly arises from the charge transferring through the chemical bonds. The strong anisotropy in the transport properties along zigzag and armchair directions is observed

Electronic ground state properties of strained graphene

We consider the effect of the Coulomb interaction in strained graphene using tight-binding approximation together with the Hartree-Fock interactions. The many-body energy dispersion relation, anisotropic Fermi velocity renormalization and charge compressibility in the presence of uniaxial strain are calculated. We show that the quasiparticle quantities are sensitive to homogenous strain and indeed, to its sign. The charge compressibility is enhanced by stretching and suppressed by compressing a graphene sheet. We find a reduction of Fermi velocity renormalization along the direction of graphene deformation, in good agreement with the recent experimental observation.Comment: 19 pages, 6 figures. To appear in Phys. Rev.

A Model of f(R) Gravity as an Alternative for Dark Matter in Spiral Galaxies

In this paper we study consistent solutions of spherically symmetric space in metric f(R) gravity theory. Here we inversely obtain a generic action from metric solutions that describe flat rotation curves in spiral galaxies without dark matter. Then we show that obtained solutions are in conformity with Tully-Fisher relation and modified Newtonian dynamics, which are two strong constraints in justification of flat rotation curves in spiral galaxies.Comment: 4 pages, no figure, PD

Charge transport in doped zigzag phosphorene nanoribbons

The effects of lattice distortion and chemical disorder on charge transport properties of two-terminal zigzag phosphorene nanoribbons (zPNRs), which shows resonant tunneling behavior under an electrical applied bias, are studied. Our comprehensive study is based on an {\it ab~initio} quantum transport calculations on the basis of the Landauer theory. We use nitrogen and silicon substitutional dopant atoms, and employ different physical quantities such as $I-V$ curve, voltage drop behavior, transmission spectrum, transmission pathway, and atomic current, to explore the transport mechanism of zPNR devices under a bias voltage. The calculated transmission pathways show the transition from a ballistic transport regime to a diffusive and in some particular cases to localized transport regimes. Current flowing via the chemical bonds and hopping are monitored, however, the conductance originates mainly from a charge traveling through the chemical bonds in the vicinity of the zigzag edges. Our results show that, in the doped systems, the device conductance decreases and negative differential resistance characteristic becomes weak or eliminates. Besides, the conductance in a pure zPNR system is almost independent of the ribbon width

Electronic structure and layer-resolved transmission of bilayer graphene nanoribbon in the presence of vertical fields

Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of strain on the electronic structure, the edge-states and charge transport of bilayer graphene nanoribbon at zero-temperature. We demonstrate a valley polarized quantum Hall effect in biased bilayer graphene when the system is subjected to a perpendicular magnetic field. In this system a topological phase transition from a quantum valley Hall to a valley polarized quantum Hall phase can occur by tuning the interplanar strain. Furthermore, we study the layer-resolved transport properties by calculating the layer polarized quantity by using the recursive Green's function technique and show that the resulting layer polarized value confirms the obtained phases. These predictions can be verified by experiments and our results demonstrate the possibility for exploiting strained bilayer graphene in the presence of external fields for electronics and valleytronics devices.Comment: 10 pages, 9 figures, typos are correcte

Specular Andreev reflection in thin films of topological insulators

We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.Comment: 10 pages, 9 figures. Some typos are correcte

Excitons and optical spectra of phosphorene nanoribbons

On the basis of many-body {\it ab-initio} calculations, using single-shot G$_0$W$_0$ method and Bethe-Salpeter equation, we study phosphorene nanoribbons (PNRs) in the two typical zigzag and armchair directions. The electronic structure, optical absorption, electron-hole (exciton) binding energy, exciton exchange splitting, and exciton wave functions are calculated for different size of PNRs. The typically strong splitting between singlet and triplet excitonic states make PNRs favorable systems for application in optoelectronic. Quantum confinement occurs in both kinds of PNRs, and it is stronger in the zPNRs, as behave like quasi-zero-dimensional systems. Scaling laws are investigated for the size-dependent behaviors of PNRs. The first bright excitonic state in PNRs is explored in detail.Comment: 9 pages, 11 figure

A Deep Dive into f(R) Gravity Theory

In this paper we have derived the behavior of deceleration parameter with respect to redshift in context of f(R) gravity in vacuum using Taylor expansion of derivative of action. Here we have obtained that the two first terms in Taylor expansion may describe the late time acceleration which is appeared by SNeIa without need of dark energy and dark matter. Also we have derived that any other terms higher than z in Taylor expansion may describe main inflationary epoch in the early Universe. We have shown that f(R) gravity may cover all the dynamical history of the Universe from the beginning to the late time accelerating phase transition.Comment: 10 pages, 6 figures, Eq. (4) is corrected, comments welcom

Vacuum Solution of a Linear Red-Shift Based Correction in f(R)f(R) Gravity

In this paper we have considered a red-shift based linear correction in derivative of action in the context of vacuum $f(R)$ gravity. Here we have found out that the linear correction may describe the late time acceleration which is appeared by SNeIa with no need of dark energy. Also we have calculated the asymptotic action for the desired correction. The value of all solutions may reduce to de' Sitter universe in the absence of correction term.Comment: Revised version, 18 pages, 7 figure