Computer simulation of a thin magnetic film with vertical anisotropy

We describe a discrete micromagnetic model for a thin magnetic layer which has been developed to perform computer simulations of the system. The magnetisation in this model is given in terms of a cubic array of interacting microscopic spins. The dynamics of the spins is given by a time discretisation of the Landau-Lifshitz-Gilbert equations of motion. The array is continued periodically in the x- and y-direction in order to reduce boundary effects, and is finite in the z-direction. The mutual interactions that are incorporated are exchange and dipole interaction, and the crystal lattice interaction is modeled by a roughly vertical uniaxial anisotropy term. The strengths of the different interactions are scaled so as to conform to values for CoCr, fitted to experimental results within the context of continuum models. For this setup we have determined full hysteresis curves and compared with experimental results of these films

A HREM study of the atomic structure and the growth mechanism of the YBa2Cu3O7/YSZ interface

The interface between yttria-stabilized zirconia (YSZ) substrate and YBa2Cu3O7 (YBCO) film was studied by high-resolution electron microscopy. In all specimens we have observed an intermediate layer of BaZrO3 located between the substrate YSZ and YBCO. The BaZrO3 layer is composed of almost equally aligned domains being 4¿8 nm in the lateral directions. Reaction products such as Y and Cu oxides were never observed in or close to the BaZrO3 reaction layer but they do occur in the YBCO film. The stacking sequence of BaZrO3/YBCO is predominantly (BaZrO3)-ZrO2-BaO/CuO-BaO-(YBCO) with CuO layer as the beginning YBCO layer. Sometimes a stacking sequence (BaZrO3)-ZrO2-BaO/BaO-CuO2-(YBCO) with a BaO layer as the beginning YBCO layer was observed. This stacking is related to a dislocation with Burgers vector a'/2 [111], where a' = 0.42 nm is the lattice constant of the cubic BaZrO3. Three main epitaxial relations (0°, 45°, 9°) between YSZ and YBCO were observed. These can be explained by near-coincidence site lattices ¿ = 25, ¿ = 49 and ¿ = 13 (for a YSZ substrate). Usually the (001) plane of the YBCO film is parallel to the (001) plane of the BaZrO3 layer and parallel to the substrate surface. In case YBCO is grown on an inclined YSZ substrate, the (001) plane of the YBCO film is parallel to the substrate surface and thus not parallel to the (001) plane of the YSZ substrate

Evaluation of the probing profile of scanning force microscopy tips

It is demonstrated that a high-temperature-treated (305) surface of a SrTiO3 crystal can be used to evaluate the probing profile of AFM tips routinely, to provide a means of selecting perfect tips and to evaluate possible image distortions. This is important in order to recognize typical AFM artifacts which are caused by tips with truncated or twinned peaks which occur rather often in the case of microfabricated AFM needles. By means of selected needles, it is shown that also defective tips can give apparently rather perfect atomic resolution from flat crystal surfaces. Scope and limitations of the resolution of structural defects are discussed as the criterion for real atomic resolution

Influence of PrBa2Cu3-xGaX07 barrier material on electrical behaviour of ramp-type Josephson junctions

The use of PrBa2Cu3-xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3-xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed

Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented

A 5 tesla superconducting magnet and cryostats for an EPR/FMR spectrometer

A description is given of the cryogenic part of an electron paramagnetic resonance (EPR)/ferromagnetic resonance (FMR) spectrometer using Ka-band (26.5-40 GHz) and U-band (40-60 GHz) frequencies for resonance measurements on large magnetic thin-films. The unit has two cryostats; the first has a room-temperature vertical inlet tube giving access to the center of the superconducting magnet. This cryostat can be rotated around the central axis of the inlet tube and enables rotation of the magnetic field around a fixed sample, placed in the center of the magnet. This cryostat also contains a superconducting Helmholtz-like coil (up to 5 T at the center). Also there is a flow cryostat placed freely in the inlet tube of the first cryostat. This cryostat is used to cool the EPR/FMR sample. The discussion of the EPR/FMR presented places emphasis on the construction of both cryostats, as well as on the design calculations and construction of the superconducting magnet coil. The calculations are compared with experimental data

Calibration and evaluation of scanning-force-microscopy probes

It is demonstrated that a stepped (305) surface of a SrTiO3 crystal can be used routinely to evaluate the probing profile of scanning-force-microscopy probes. This provides a means to select optimal surface probes, and to evaluate possible image distortions within the range of the atomic and nanometer scale. The scope and limitations of the resolution of structural defects are discussed as a criterion for a true atomic resolution

Microstructures of ramp-edge YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox Josephson junctions on different substrates

Ramp-edge YBa2Cu3/PrBa2Cu3Ox/YBa2Cu3Ox Josephson junctions with PrBa2Cu3Ox (PrBCO) or SrTiO3 as a separating layer on different kinds of substrate have been studied by high-resolution electron microscopy. The bottom YBa2Cu3Ox (YBCO) layer and the separating layer (PrBCO or SrTiO3) were epitaxially c oriented, irrespective of the substrate (yttria stabilized zirconia (YSZ), SrTiO3 or NdGaO3, all in (001) orientation). The use of ion milling in the manufacturing of Josephson junctions was found to yield smooth slopes with an angle of about 20°. The Josephson junction was facing away from the beam direction was found to have a dimple in the substrate near the base of the junction. The barrier layers were observed to have a homogeneous thickness. These layers were as the top YBCO layers were oriented with their c-axis perpendicular to (001) plane of the substrate for perovskite substrates and perpendicular to the surface for YSZ substrates. In the case of a YSZ substrate, the dimple in the substrate as well as the slope of the substrate close to the base of the junction were found to lead to small angle grain boundaries in the YBCO film as well as randomly oriented YBCO grains, which results in a poor ramp-edge junction. In the case of SrTiO3 or NdGaO3 substrate, all components of the device were fully epitaxial, thus resulting in good ramp-edge junctions

Design and fabrication of a HTc quasi-one junction SQUID based comparator for a 4-bit superconductive flash A/D converter

The design of a quasi-one-junction superconducting quantum interference device (SQUID)-based comparator for an all HTC superconductive 4-b flash analog-to-digital (A/D) converter is proposed and discussed. Ramp-type junctions of YBCO/PBCO/YBCO are used. The inductance can be realized by a stripline between the junctions. Simulations by the PSCAN package show correct behavior of the quasi-one-junction SQUID (QOS) up to frequencies of approximately 1 GHz. The output voltage pulses are periodic with the input current, as expected. In the dynamic simulations, output voltage pulses are observed at an applied flux of around (2m-1)¿0/2. Tile junctions in the QOS are structured on two ramp-edges. The operating frequencies will be below 1 MHz in this first design. A first realization uses the YBa2Cu3O7-x (YBCO) superconductor and PrBa2Cu3O7-x (PBCO) as junction barrier and electrode interlayer material. On a 10-mm×10-mm SrTiO3 (001) substrate, nine comparators and four separate ramp-edge junctions are realize

Vortex motion and Josephson effect in superconducting microbridges in (001) and (105) oriented YBaCuO thin films

Microbridges with dimensions smaller than the effective penetration depth have been prepared in epitaxially grown