114 research outputs found

    Near-field spectroscopy and tuning of subsurface modes in plasmonic terahertz resonators

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    Highly confined modes in THz plasmonic resonators comprising two metallic elements can enhance light-matter interaction for efficient THz optoelectronic devices. We demonstrate that sub-surface modes in such double-metal resonators can be revealed with an aperture-type near-field probe and THz time-domain spectroscopy despite strong mode confinement in the dielectric spacer. The sub-surface modes couple a fraction of their energy to the resonator surface via surface waves, which we detected with the near-field probe. We investigated two resonator geometries: a λ/2 double-metal patch antenna with a 2 μm thick dielectric spacer, and a three-dimensional meta-atom resonator. THz time-domain spectroscopy analysis of the fields at the resonator surface displays spectral signatures of sub-surface modes. Investigations of strong light-matter coupling in resonators with sub-surface modes therefore can be assisted by the aperture-type THz near-field probes. Furthermore, near-field interaction of the probe with the resonator enables tuning of the resonance frequency for the spacer mode in the antenna geometry from 1.6 to 1.9 THz (~15%)

    Designing an efficient hybrid optical cavity

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    We present an efficient terahertz (THz) detector based on an optically thin hybrid cavity. We use experimental and numerical methods to design efficient detectors, finding a hybrid cavity structure with a photoconductive (PC) layer as thin as 50 nm which absorbs almost 80% of light at the operation wavelength. These optically thin detectors are well suited to near-field microscopy and terahertz component integration

    Tunable Fully Absorbing Metasurfaces for Efficient THz Detection

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    Terahertz photoconductive antennas with a nanostructured active region have been actively investigated recently with a goal to achieve high efficiency THz detectors and emitters. Here we provide a novel design of perfectly-absorbing photoconductive region without plasmonic elements using a metasurface, and provide a systematic method by which the metasurface can be designed to work optimally for varying optical gate frequencies across the GaAs band-gap. This paves the way to using metasurface devices for THz detection and other applications in a wide range of laser systems operating at different wavelengths or with different photoconductive materials

    3 mu m aperture probes for near-field terahertz transmission microscopy

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    The transmission of electromagnetic waves through a sub-wavelength aperture is described by Bethe's theory. This imposes severe limitations on using apertures smaller than ∼1/100 of the wavelength for near-field microscopy at terahertz (THz) frequencies. Experimentally, we observe that the transmitted evanescent field within 1 μm of the aperture deviates significantly from the Bethe dependence of E ∝ a 3. Using this effect, we realized THz near-field probes incorporating 3 μm apertures and we demonstrate transmission mode THz time-domain near-field imaging with spatial resolution of 3 μm, corresponding to λ/100 (at 1 THz)

    Efficient Terahertz Detection with Perfectly-Absorbing Metasurface

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    We demonstrate a unique photoconductive design for terahertz (THz) detection based on a perfectly absorbing, all-dielectric metasurface. Our design exploits Mie resonances in electrically connected cubic resonators fabricated in low-temperature grown (LT) GaAs. Experimentally, the detector achieves very high contrast between ON/OFF conductivity states (107) whilst also requiring extremely low optical power for optimal operation (100 muW). We find that the Mie resonances dissipate sufficiently fast and maintain the detection bandwidth up to 3 THz

    Terahertz detectors based on all-dielectric photoconductive metasurfaces

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    Performance of terahertz (THz) photoconductive devices, including detectors and emitters, has been improved recently by means of plasmonic nanoantennae and gratings. However, plasmonic nanostructures introduce Ohmic losses, which limit gains in device performance. In this presentation, we discuss an alternative approach, which eliminates the problem of Ohmic losses. We use all-dielectric photoconductive metasurfaces as the active region in THz switches to improve their efficiency. In particular, we discuss two approaches to realize perfect optical absorption in a thin photoconductive layer without introducing metallic elements. In addition to providing perfect optical absorption, the photoconductive channel based on all-dielectric metasurface allows us to engineer desired electrical properties, specifically, fast and efficient conductivity switching with very high contrast. This approach thus promises a new generation of sensitive and efficient THz photoconductive detectors. Here we demonstrate and discuss performance of two practical THz photoconductive detectors with integrated all-dielectric metasurfaces

    Perfectly-absorbing photoconductive metasurfaces for THz applications

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    Ultrafast switching of photoconductivity is essential for many terahertz (THz) technologies, however this process is inefficient. Recently developed concepts of all-dielectric metasurfaces can improve efficiency of ultrafast switches, overcoming material limitations, reducing the thickness of the photoconductive region and lowering optical power requirements for THz devices. We will consider two types of perfectly absorbing metasurfaces compatible with the photoconductive switch architecture and discuss performance of THz detectors with integrated metasurfaces. We will show that optical power level required for optimum operation for these THz detectors is more than one order of magnitude lower in comparison to devices without metasurfaces

    Perfect absorption in GaAs metasurfaces near the bandgap edge

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    Perfect optical absorption occurs in a metasurface that supports two degenerate and critically-coupled modes of opposite symmetry. The challenge in designing a perfectly absorbing metasurface for a desired wavelength and material stems from the fact that satisfying these conditions requires multi-dimensional optimization often with parameters affecting optical resonances in non-trivial ways. This problem comes to the fore in semiconductor metasurfaces operating near the bandgap wavelength, where intrinsic material absorption varies significantly. Here we devise and demonstrate a systematic process by which one can achieve perfect absorption in GaAs metasurfaces for a desired wavelength at different levels of intrinsic material absorption, eliminating the need for trial and error in the design process. Using this method, we show that perfect absorption can be achieved not only at wavelengths where GaAs exhibits high absorption, but also at wavelengths near the bandgap edge. In this region, absorption is enhanced by over one order of magnitude compared a layer of unstructured GaAs of the same thickness

    Sensitivity and Noise in THz Photoconductive Metasurface Detectors

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    Photoconductive antenna THz detectors based on highly absorbing LT-GaAs metasurfaces enable high sensitivity and high signal-to-noise ratio (> 106) at optical gate powers as low as 5 μW. By investigating the dependence of detector performance on optical gate power, we compare several metasurface detectors with standard PCAs and develop a general model for quantifying the sensitivity and optimal gate power for detector operation. We also show that the LT-GaAs metasurface can even enhance sub bandgap absorption, enabling the use of these detectors in telecom wavelength systems

    Nonlinear Terahertz Generation in Semiconductor Metasurfaces

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    We demonstrate ultra-thin semiconductor metasurfaces for generation of THz pulses. By investigating the dependence of the THz amplitude and phase on excitation field polarization and crystal orientation, we deduce that the underlying THz emission mechanism in metasurfaces differs from bulk semiconductor wafers with second order nonlinearity playing a dominant role. The metasurface enables control of the THz phase and can therefore be used to spatially structure the THz emitted field. We use this effect to design and demonstrate a metasurface which simultaneously emits and focusses THz pulses
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