Investigation of multi-layer thin films for energy storage.

We investigate here the feasibility of increasing the energy density of thin-film capacitors by construction of a multi-layer capacitor device through ablation and redeposition of the capacitor materials using a high-power pulsed ion beam. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The dielectric capacitor filler material was a composition of Lead-Lanthanum-Zirconium-Titanium oxide (PLZT). The energy storage can be increased by using material of intrinsically high dielectric constant, and constructing many thin layers of this material. For successful device construction, there are a number of challenging requirements including correct stoichiometric and crystallographic composition of the deposited PLZT. This report details some success in satisfying these requirements, even though the attempt at device manufacture was unsuccessful. The conclusion that 900 C temperatures are necessary to reconstitute the deposited PLZT has implications for future manufacturing capability

Ultra-thin multilayer capacitors.

The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report details some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation

Characterization of deuterium beam operation on RHEPP-1 for future neutron generation applications.

We investigate the potential for neutron generation using the 1 MeV RHEPP-1 intense pulsed ion beam facility at Sandia National Laboratories for a number of emerging applications. Among these are interrogation of cargo for detection of special nuclear materials (SNM). Ions from single-stage sources driven by pulsed power represent a potential source of significant neutron bursts. While a number of applications require higher ion energies (e.g. tens of MeV) than that provided by RHEPP-1, its ability to generate deuterium beams allow for neutron generation at and below 1 MeV. This report details the successful generation and characterization of deuterium ion beams, and their use in generating up to 3 x 10{sup 10} neutrons into 4{pi} per 5kA ion pulse

Calculations of the response of inertial fusion energy materials to x-ray and ion irradiation on Z and RHEPP

The response of candidate Inertial Fusion Energy first wall materials to the intense bursts of x-rays and ions that will emanate from IFE targets is an important issue for power plants and for any facility that would test high yield target performance. In an effort to gain understanding of the behavior of these materials while undergoing rapid phase changes and to validate code that predict such behaviors, a multi-institution group has been conducting experiments on the 2 and RHEPP facilities at Sandia. As part of this project, calculations of irradiation with tungsten wire array x-ray on 2 and ions on RHEPP have been performed with the BUCKY computer code. When comparing experiments to calculations for graphite and tungsten samples, we have found some behavior that is not predicted by the code. We will show how the greater than 1 keV lines in the 2 tungsten wire array x-ray source affect the material response. On the RHEPP ion experiments, we will show how sensitive the results are to the thermal conductivity of the material

Investigations of shot reproducibility for the SMP diode at 4.5 MV.

In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsed power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics.