In situ determination of InGaAs and GaAsN composition in multiquantum-well structures

Metal-organic vapor phase epitaxialgrowth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.Peer reviewe

Simultaneous determination of indium and nitrogen contents of InGaAsN quantum wells by optical in situ monitoring

In situ monitoring of metal-organic vapor phase epitaxialgrowth of InGaAsN∕GaAs multiquantum wells is studied. The complex refractive index of InGaAsN is determined for several indium and nitrogen contents based on the fits to the reflectance curve. Taking advantage of the different effects caused by the incorporation of indium and nitrogen on the complex refractive index of InGaAsN, the InGaAsN quantum well nitrogen and indium contents are simultaneously determined in situ.Peer reviewe

In situ determination of nitrogen content in InGaAsN quantum wells

The growth of InGaAsN/GaAs multiple quantum well structures by metal-organic vapor phase epitaxy is monitored by in situ reflectometry. The nitrogen incorporation is found to depend superlinearly on the precursor flow and a threshold value for the flow is observed. By in situmeasurements of the InGaAsN quantum well samples with a fixed indium content, the change in the reflectance during the quantum wellgrowth is found to be linearly dependent on the quantum well nitrogen content. A model to determine the nitrogen content already during the growth is developed. Moreover, the field of application of in situ reflectance monitoring is extended from thick layers to thin layers, including quantum wells.Peer reviewe

Nitrogen content of GaAsN quantum wells by in-situ monitoring during MOVPE Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth

Abstract Metal-organic vapor phase epitaxial growth of GaAsN quantum wells is monitored by in situ reflectance measurements. Correlation between the change in the reflectance intensity and nitrogen content of the quantum well is established. The reflectance as a function of time also reveals if there is deterioration of the crystalline quality during growth. This method together with X-ray diffraction and photoluminescence characterization is applied to analyze GaAsN growth using various reactor pressures and TBAs/III molar flow ratios.

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

The metal ion-complexing properties of 1,10-phenanthroline-2,9-dicarboxylic acid (PDA) are reported. The protonation constants (pK1 = 4.75, pK2 = 2.53) and formation constants (log K(1)) for PDA with Mg(II) (3.53), Ca(II) (7.3), Sr(II) (5.61), Ba(II) (5.43), La(III) (13.5), Gd(III) (16.1), Zn(II) (11.0), Cd(II) (12.8), Pb(II) (11.4), and Cu(II) (12.8) were determined by UV-vis spectroscopy in 0.1 M NaClO4 at 25 degrees C. The log K(1) values for most of these metal ions were high enough that they were not displaced from their PDA complexes even at pH 2. The log K(1) values were determined using the UV spectra to monitor the competition with EDTA (or DTPA; EDTA = ethylendiamine tetraacetic acid, DTPA = diethylenetriamine pentaacetic acid) as a function of pH according to the equilibrium: M(EDTA) + PDA + nH+ = M(PDA) + EDTAHn. The log K1 values indicate that the rigid extended aromatic backbone of PDA leads to high levels of ligand preorganization and selectivity toward large metal ions (e.g., Ca(II), Cd(II), Gd(III)) with an ionic radius of about 1.0 A and greatly enhanced thermodynamic stability as compared to similar ligands without the reinforcing aromatic backbone. The structure of [Ca(PDA)(H2O)2].2H2O (1) is reported: orthorhombic, Fdd2, a = 44.007(9) A, b = 18.945(4) A, c = 7.2446(14) A, V = 6040(2) A(3), Z = 16, R = 0.0882. The Ca(II) ion has a coordination number of eight, lying in the plane of the tetradentate PDA, with Ca-N bonds averaging 2.55 A and Ca-O bonds to the two acetate groups of PDA averaging 2.45 A. These are very close to the normal Ca-L bonds of this type, supporting the idea that a metal ion the size of Ca(II) (ionic radius approximately 1.0 A) will fit into PDA in a low-strain manner. The remaining four coordination sites on Ca(II) in 1 come from two coordinated water molecules and a chelating carboxylate bridging from an adjacent [Ca(PDA)(H2O)2].2H2O complex. Potential applications of PDA as a ligand in biomedical applications such as Gd(III) contrast agents in MRI are discussed

Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material