Compensation for nonlinear effects due to high heat flux in thin-film thermometry

Compensation for nonlinear effects due to high heat flux in thin-film thermometr

Soviet Inheritance Cases in American Courts and the Soviet Property Regime

Many American states have statutes limiting transmission of monies from estates in this country to citizens of countries behind the Iron Curtain. American courts have come under heavy criticism for construing these statutes unfavorably to foreign heirs, especially where transmission to heirs in the Soviet Union is withheld. This article analyzes the relevant American and Soviet law and concludes that American courts, while they have not always been completely objective, nevertheless may be justified in withholding distribution from Soviet citizens

A Method for Determining Optimum Re-entry Trajectories

Determining optimum atmospheric reentry trajectories using Pontryagin maximum principl

Deregulation of the Australian Wheat Export Market: What Happened to Wheat Prices?

This paper investigates whether deregulation of the Australian wheat export market induced a structural change in the price data generation process. We examine the unit root properties of Western Australian wheat prices by testing for the possibility of single and double structural breaks in the price series. Daily prices for the period 20th of May 2003 to 14th of September 2010 are used. We find that the wheat price series has a unit root with two structural breaks but neither break coincided with the time when the Wheat Export Marketing Act 2008 came into effect on 1 July 2008. We conclude that change in local market behaviour would have started prior to actual deregulation with subsequent effect on local price.deregulation, unit root, structural breaks, wheat price, Agribusiness, Demand and Price Analysis, Marketing, Q13, Q18,

Dry Etch of Shadow Trench Isolation

Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced local oxidation of silicon (LOCOS) as the conventional isolation technique for sub-micron devices. STI increases transistor-packing density, allowing for more functionality and speed per unit area. STI offer superior latch-up immunity, smaller channel-width encroachment and better planarity. The implementation and feasibility of STI has been examined for device fabrication at RIT previously. The process utilized was etching of shallow trenches using SF6-02 dry chemistry and trench fill by TEOS (tetraethylorthosilicate) oxide deposition. The etch chemistry used did not yield anisotropic etching and appreciable undercutting was observed. In the present study, STI process used includes 60 nm of thermal pad oxide and 160 nm of LPCVD nitride as the hard mask. To create the shallow trenches, Si is etched using SF6-CHF3 chemistry for dry etching. The objective is to etch the trenches of depth — 0.5 μm - 0.8 μm deep without undercutting and with high selectivity on resist. A series of experiments have been done to study the Si trench etching using SF6-CHF3 chemistry in the DryTek Quad tool by varying process parameters. The results will be presented at the conference