A Review on Modeling of AlGaN/GaN MODFET based on Artificial Neural Networks

High electron mobility transistors (HEMTs) based on GaN have gained attention mainly due to its high quality performance especially in high-frequency as well as high-power devices. Significant developments have been donein terms of fabrication and performance of HEMT through several modeling techniques. This review article focuses on artificial neural networks for modeling of HEMT devices with enhanced performance.The focus of this article is further extended to the discussion of different models of AlGaN/GaN HEMT devices

Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET

A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of various capacitances to the performance of the device is shown. The model further predicts the transconductance, drain conductance, and frequency of operation. A high transconductance of 160 mS/mm and a cut-off frequency of 11.6 GHz are obtained for a device of 50 nm gate length. The effect of gate length on the gate length behaviour of the noise coefficients P, R, and C is also studied. The effect of parasitic source and gate resistance has also been studied to evaluate the minimum noise figure. The excellent agreement with the previously simulated results confirms the validity of the proposed model to optimize the device performance at high frequencies