Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

In p-n-junction temperature sensors connected in the forwardbiased, the temperature dependence of the built-in potential is important, while in the reverse biased p-n-junction temperature sensors, it is necessary to study the temperature dependence of the built-in potential and space-charge region width.For this case, as well as for homogeneous and gradient alloyed cases, the temperature dependence of built-in potential and space-charge region widthare studied and mathematical analysis is presented for these cases.Based on these mathematical analysis, the results are obtained for cases where the base region of p-n-junction temperature sensors is doped at different concentrations with a homogeneous or inhomogeneous distributions of impurities. It is well known that in conventional temperature sensors, when the main current transport mechanism is determined by generation-recombination processes in space charge region, the dependence of the space charge region width on the temperature can affect the linearity of temperature response curve of sensor, it is desirable to increase the doping rate of the base region to weaken this effect, or it is necessary to use p-n junction

Grammatical Meanings of Plusquamperfect Tense and its Contextual Analysis

The article examines the polysemy of plusquamperfekt in German. Plusquamperfekt is used to express the long past tense, and also has the property of relative usage. The interaction of two or more tenses in the same context is called the relative tenses of verbs. In this case, the connection between two or more actions is not focused on the moment of speech, but enters into a mutual connection. Linguists' theories about polysemy plusquamperfekt are substantiated and contextually analyzed using examples from German works of art

Influence of neutron radiation on breakdown voltage of silicon voltage limiter

Experimental study of silicon voltage limiters’ breakdown voltage dependence on neutron radiation was conducted. It revealed that with increase of radiation density from 0.1×1014 to 2×1015 N/cm2 the breakdown voltage monotonously increases: the smaller the breakdown voltage, the higher radiation density is needed to provide nominal breakdown voltage. Test curves which may be used for stabilization (normalization) of the breakdown voltage for samples with technological variations are suggested

On mechanism of radiative sensitivity of power diode direct voltage drop

There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×1014 to 2×1015 Фe/cm2 results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons