4 research outputs found
Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs
Gate-tunable high mobility remote-doped InSb/In<sub>1-x</sub>Al<sub>x</sub>Sb quantum well heterostructures
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on
GaAs substrates are reported. The QW two-dimensional electron gas (2DEG)
channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In
asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by
atomic layer deposition, parallel conduction is eliminated and complete 2DEG
channel depletion is reached with minimal hysteresis in gate bias response of
the 2DEG electron density. The integer quantum Hall effect with Landau level
filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic
contact to the 2DEG with contact resistance below 1{\Omega} \cdot mm is
achieved at 1.8K.Comment: 25 pages, 10 figure