Motivation types and mental health of UK hospitality workers.

The primary purposes of this study were to (i) assess levels of different types of work motivation in a sample of UK hospitality workers and make a cross-cultural comparison with Chinese counterparts and (ii) identify how work motivation and shame-based attitudes towards mental health explain the variance in mental health problems in UK hospitality workers. One hundred three UK hospitality workers completed self-report measures, and correlation and multiple regression analyses were conducted to identify significant relationships. Findings demonstrate that internal and external motivation levels were higher in UK versus Chinese hospitality workers. Furthermore, external motivation was more significantly associated with shame and mental health problems compared to internal motivation. Motivation accounted for 34–50% of mental health problems. This is the first study to explore the relationship between motivation, shame, and mental health in UK hospitality workers. Findings suggest that augmenting internal motivation may be a novel means of addressing mental health problems in this worker population.N/

Vapor-liquid equilibria of the binary system 1,5-hexadiene + allyl chloride

Knowledge of accurate vapor–liquid equilibrium data for mixtures of allyl chloride and 1,5-hexadiene is important for several industrial purposes. The bubble points of binary mixtures of allyl chloride and 1,5-hexadiene have been measured experimentally using a synthetic method. Measurements were carried over concentrations ranging from (0 to 1) mol % of allyl chloride. The vapor–liquid equilibrium is presented at temperatures ranging from (25 to 100) °C. Within this temperature range, bubble-point pressures up to 5 bar were observed. The experimental results indicated that, as the concentration of allyl chloride increases in the mixture, higher pressures are necessary for a complete dissolution of the two components. In addition, solubility pressures increase as temperature increases for a mixture of fixed compositio

Gate stacks

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Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

The transition regions of GdSiO/SiOx and HfO2/ SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission electron microscopy (TEM). From measurements of thermally stimulated current (TSC), electron states were found in the transition region of the HfO2/SiOx structures, exhibiting instability attributed to the flexible structural molecular network expected to surround the trap volumes. The investigations were focused especially on whether the trap states belong to an agglomeration consisting of a single charge polarity or of a dipole constellation. We found that flat-band voltage shifts of MOS structures, that reach constant values for increasing oxide thickness, cannot be taken as unique evidence for the existence of dipole layers