1 research outputs found
Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
We have fabricated air-stable n-type, ambipolar carbon nanotube field effect
transistors (CNFETs), and used them in nanoscale memory cells. N-type
transistors are achieved by annealing of nanotubes in hydrogen gas and
contacting them by cobalt electrodes. Scanning gate microscopy reveals that the
bulk response of these devices is similar to gold-contacted p-CNFETs,
confirming that Schottky barrier formation at the contact interface determines
accessibility of electron and hole transport regimes. The transfer
characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices
show strongly enhanced gate coupling, most likely due to reduction of defect
density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB
data in the ``on''-state indicates that these CNFETs are nearly ballistic
conductors at high electrostatic doping. Due to their nanoscale capacitance,
CNFETs are extremely sensitive to presence of individual charge around the
channel. We demonstrate that this property can be harnessed to construct data
storage elements that operate at the few-electron level.Comment: 6 pages text, 3 figures and 1 table of content graphic; available as
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