Advances and Prospect of Nanotechnology in Stem Cells

In recent years, stem cell nanotechnology has emerged as a new exciting field. Theoretical and experimental studies of interaction between nanomaterials or nanostructures and stem cells have made great advances. The importance of nanomaterials, nanostructures, and nanotechnology to the fundamental developments in stem cells-based therapies for injuries and degenerative diseases has been recognized. In particular, the effects of structure and properties of nanomaterials on the proliferation and differentiation of stem cells have become a new interdisciplinary frontier in regeneration medicine and material science. Here we review some of the main advances in this field over the past few years, explore the application prospects, and discuss the issues, approaches and challenges, with the aim of improving application of nanotechnology in the stem cells research and development

High-Temperature Electronic Materials: Silicon Carbide and Diamond

The physical and chemical properties of wide-band-gap semiconductors make these materials an ideal wide bandgapsemiconductor choice for device fabrication for applications in many different areas, e.g. light emitters, high-temperature and high-power electronics, high-power microwave devices, micro-electromechanical system (MEM) technology, and substrates for semiconductor preparation. These semiconductors have micro-electromechanical system (MEMS) been recognized for several decades as being suitable for these applications, but until recently the low material quality has not allowed the fabrication of high-quality devices. In this material quality chapter, we review the wide-band-gap semiconductors, silicon carbide and diamond. Silicon carbide electronics is advancing from the research stage to commercial production. The commercial availability of single-crystal SiC substrates during the early 1990s gave rise to intense activity in the development of silicon carbide devices. The commercialization started with the release of blue light-emitting diode (LED). The recent release of high-power Schottky diodes was a further demonstration of the progress made towards defect-free SiC substrates. Diamond has superior physical and chemical properties. Silicon-carbide- and diamond-based diamondsilicon carbide (SiC) electronics are at different stages of development. The preparation of high-quality single-crystal substrates of wafer size has allowed recent significant progress in the fabrication of several types of devices, and the development has reached many important milestones. However, high-temperature studies are still scarce, and diamond-based electronics is still in its infancy