6 research outputs found
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Effects of Alternating Bias Irradiation on Defects in MOS Devices
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Electrical breakdown in thin oxides during bias-temperature ramps
Electrical breakdown in thin oxides is assessed by a new bias-temperature ramp technique. No significant effect of radiation exposure on breakdown is observed for high quality thermal and nitrided oxides, up to 20 Mrad(SiO{sub 2})
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Electrical Breakdown of Thin Oxides During Ramped Current-Temperature Stress
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Thermal-Stress Effects and Enhanced Low Dose Rate Sensitivity in Linear Bipolar Ics
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Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits
Thermal-stress effects are shown to have a significant impact on the enhanced low-dose-rate sensitivity of linear bipolar circuits. Implications of these results on hardness assurance testing and mechanisms are discussed
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Correlation Between Co-60 and X-Ray Exposures on Radiation-Induced Charge Buildup in Silicon-on-Insulator Buried Oxides
Large differences in charge buildup in SOI buried oxides can result between x-ray and Co-60 irradiations. The effects of bias configuration and substrate type on charge buildup and hardness assurance issues are explored