30 research outputs found

    Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

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    Magnetic phase diagram of mercury manganese selenide

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    The magnetic susceptibility was measured for Hg1-xMnxSe samples with x = 0.002, 0.024, 0.035, 0.08 and 0.129. A transition to a spin-glass state was observed for concentration x = 0.024. The results are discussed together with the data for other semimagnetic semiconductors. The role of the nearest neighbor interaction is small, weak but long range interactions are more important. The value of the energy gap influences the spin-glass transition temperature below the percolation threshold

    Hole density and composition dependence of ferromagnetic ordering in lead tin manganese telluride

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    The influence of the concentration of charge carriers on the ferromagnetic phase transition of the semimagnetic semiconductor Pb1-x-ySnyMnxTe for various compositions is reported. A critical density of carriers above which a ferromagnetic transition can take place, is observed. A simple modified Ruderman-Kittel-Kasuya-Yosida mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute and a finite mean free path is implemented. An excellent quantitative agreement with the data is obtained
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