STUDIES OF SAPPHIRE PHOTOABLATION BY LASER-INDUCED FLUORESCENCE AND PHOTOTHERMAL DEFORMATION MEASUREMENTS

Crystalline sapphire displays a low, 0.6 J/CM2, threshold for etching with 193 nm excimer pulses. Understanding this low-threshold etching involves knowledge of the pathways by which laser energy gives rise to material removal. An accurate knowledge of surface temperature during irradiation appears sufficient to differentiate between classical thermal vaporization and electronic, I.E. photochemical mechanisms for etching

Laser etching of glass substrates by 1064 nm laser irradiation

10.1007/s00339-008-4674-0Applied Physics A: Materials Science and Processing931159-163APAM