7 research outputs found
Recommended from our members
Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors
The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors
Recommended from our members
Field dependent dopant deactivation in bipolar devices at elevated irradiation temperatures
Dopant deactivation at 100 C is measured in bipolar Si-SiO{sub 2} structures as a function of irradiation bias. The deactivation occurs most efficiently at small biases in depletion and is consistent with passivation and compensation mechanisms involving hydrogen
Recommended from our members
Measurement bias dependence of enhanced bipolar gain degradation at low dose rates
Oxide trapped charge, field effects from emitter metallization, and high level injection phenomena moderate enhanced gain degradation of lateral pnp transistors at low dose rates. Hardness assurance tests at elevated irradiation temperatures require larger design margins for low power measurement biases