16 research outputs found
Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations
We report on experimental results for the conductance of metallic
single-electron transistors as a function of temperature, gate voltage and
dimensionless conductance. In contrast to previous experiments our transistor
layout allows for a direct measurement of the parallel conductance and no ad
hoc assumptions on the symmetry of the transistors are necessary. Thus we can
make a comparison between our data and theoretical predictions without any
adjustable parameter. Even for rather weakly conducting transistors significant
deviations from the perturbative results are noted. On the other hand, path
integral Monte Carlo calculations show remarkable agreement with experiments
for the whole range of temperatures and conductances.Comment: 8 pages, 7 figures, revtex4, corrected typos, submitted to PR