Strong, Ultra-narrow Peaks of Longitudinal and Hall Resistances in the Regime of Breakdown of the Quantum Hall Effect

With unusually slow and high-resolution sweeps of magnetic field, strong, ultra-narrow (width down to $100 {\rm \mu T}$) resistance peaks are observed in the regime of breakdown of the quantum Hall effect. The peaks are dependent on the directions and even the history of magnetic field sweeps, indicating the involvement of a very slow physical process. Such a process and the sharp peaks are, however, not predicted by existing theories. We also find a clear connection between the resistance peaks and nuclear spin polarization.Comment: 5 pages with 3 figures. To appear in PR

Absence of Scaling in the Integer Quantum Hall Effect

We have studied the conductivity peak in the transition region between the two lowest integer Quantum Hall states using transmission measurements of edge magnetoplasmons. The width of the transition region is found to increase linearly with frequency but remains finite when extrapolated to zero frequency and temperature. Contrary to prevalent theoretical pictures, our data does not show the scaling characteristics of critical phenomena.These results suggest that a different mechanism governs the transition in our experiment.Comment: Minor changes and new references include

Quantum Field Theory: Where We Are

We comment on the present status, the concepts and their limitations, and the successes and open problems of the various approaches to a relativistic quantum theory of elementary particles, with a hindsight to questions concerning quantum gravity and string theory.Comment: To appear in: An Assessment of Current Paradigms in the Physics of Fundamental Phenomena, to be published by Springer Verlag (2006

Optimizing Multi-Photon Fluorescence Microscopy Light Collection from Living Tissue by Non-Contact Total Emission Detection (TEDII)

Farrando Sicilia, Jordi; Fuente Fuente, Carlo

Field-induced breakdown of the quantum Hall effect

A numerical analysis is made of the breakdown of the quantum Hall effect caused by the Hall electric field in competition with disorder. It turns out that in the regime of dense impurities, in particular, the number of localized states decreases exponentially with the Hall field, with its dependence on the magnetic and electric field summarized in a simple scaling law. The physical picture underlying the scaling law is clarified. This intra-subband process, the competition of the Hall field with disorder, leads to critical breakdown fields of magnitude of a few hundred V/cm, consistent with observations, and accounts for their magnetic-field dependence \propto B^{3/2} observed experimentally. Some testable consequences of the scaling law are discussed.Comment: 7 pages, Revtex, 3 figures, to appear in Phys. Rev.

Spontaneous luminal disequilibrium pH in S3 proximal tubules. Role in ammonia and bicarbonate transport

Abstract We determined whether a spontaneous luminal disequilibrium pH, pHdq (pH measured -pH equilibrium), was present in isolated perfused rabbit S2 and S3 proximal tubules. Luminal pH was measured by perfusing with the fluorescent pH probe 1,4-DHPN, and the equilibrium pH was calculated from the measured collected total CO2 and dissolved CO2 concentrations. S2 tubules failed to generate a spontaneous pHdq. S3 tubules generated a spontaneous acidic pH~l of -0.46±0.15 (P < 0.05), which was obliterated following the addition of carbonic anhydrase (0.1 mg/ml) to the perfusate. In S3 tubules perfused and bathed in 4 mM total ammonia, luminal total ammonia rose from 4.08±0.05 mM (perfusate) to 4.95±0.20 mM (collected fluid) (P < 0.02). Carbonic anhydrase added to the perfusate prevented the rise in the collected total ammonia concentration. We conclude that the rabbit S3 proximal tubule lacks functional luminal carbonic anhydrase. The acidic pHd in the S3 segment enhances the diffusion of NH3 into the lumen.-In contrast, the S2 segment has functional luminal carbonic anhydrase

Dynamical scaling of the quantum Hall plateau transition

Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2.Comment: v2: Length shortened to fulfil Journal criteri

Bipolaron Binding in Quantum Wires

A theory of bipolaron states in quantum wires with a parabolic potential well is developed applying the Feynman variational principle. The basic parameters of the bipolaron ground state (the binding energy, the number of phonons in the bipolaron cloud, the effective mass, and the bipolaron radius) are studied as a function of sizes of the potential well. Two cases are considered in detail: a cylindrical quantum wire and a planar quantum wire. Analytical expressions for the bipolaron parameters are obtained at large and small sizes of the quantum well. It is shown that at $R\gg 1$ [where $R$ means the radius (halfwidth) of a cylindrical (planar) quantum wire, expressed in Feynman units], the influence of confinement on the bipolaron binding energy is described by the function $\sim 1/R^{2}$ for both cases, while at small sizes this influence is different in each case. In quantum wires, the bipolaron binding energy $W(R)$ increases logarithmically with decreasing radius. The shapes and the sizes of a nanostructure, which are favorable for observation of stable bipolaron states, are determined.Comment: 17 pages, 6 figures, E-mail addresses: [email protected]; [email protected]

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted from the numerical solution of the quantum Liouville equation in the Wigner function representation. Accounting for electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface, device characteristics are obtained as a function of a channel length. From the Wigner function distributions, the coexistence of the diffusive and the ballistic transport naturally emerges. It is shown that the scattering mechanisms tend to reduce the ballistic component of the transport. The ballistic component increases with decreasing the channel length.Comment: 21 pages, 8 figures, E-mail addresses: [email protected]