59 research outputs found
Manipulation of the Spin Memory of Electrons in n-GaAs
We report on the optical manipulation of the electron spin relaxation time in
a GaAs based heterostructure. Experimental and theoretical study shows that the
average electron spin relaxes through hyperfine interaction with the lattice
nuclei, and that the rate can be controlled by the electron-electron
interactions. This time has been changed from 300 ns down to 5 ns by variation
of the laser frequency. This modification originates in the optically induced
depletion of n-GaAs layer
Spin relaxation in low-dimensional systems
We review some of the newest findings on the spin dynamics of carriers and
excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical
properties are dominated by excitonic effects, we show that exciton-exciton
interaction produces a breaking of the spin degeneracy in two-dimensional
semiconductors. In doped wells, the two spin components of an optically created
two-dimensional electron gas are well described by Fermi-Dirac distributions
with a common temperature but different chemical potentials. The rate of the
spin depolarization of the electron gas is found to be independent of the mean
electron kinetic energy but accelerated by thermal spreading of the carriers.Comment: 1 PDF file, 13 eps figures, Proceedings of the 1998 International
Workshop on Nanophysics and Electronics (NPE-98)- Lecce (Italy
Optical Orientation in Ferromagnet/Semiconductor Hybrids
The physics of optical pumping of semiconductor electrons in the
ferromagnet/semiconductor hybrids is discussed. Optically oriented
semiconductor electrons detect the magnetic state of the ferromagnetic film. In
turn, the ferromagnetism of the hybrid can be controlled optically with the
help of the semiconductor. Spin-spin interactions near the interface
ferromagnet/semiconductor play crucial role in the optical readout and the
manipulation of ferromagnetism.Comment: The review is written for a special issue "Spin Orientation" of
Semiconductor Science and Technology journal dedicated to the memory of B.P.
Zakharcheny
Low-temperature spin relaxation in n-type GaAs
Low-temperature electron spin relaxation is studied by the optical
orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3}
to 5x10^17 cm^{-3}.
A peculiarity related to the metal-to-insulator transition (MIT) is observed
in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In
the metallic phase, spin relaxation is governed by the Dyakonov-Perel
mechanism, while in the insulator phase it is due to anisotropic exchange
interaction and hyperfine interactio
Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
We report results of investigations of structural and transport properties of
GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn
layer, separated from the QW by a 3 nm thick spacer. The structure has hole
mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher
than in known ferromagnetic two-dimensional structures. The analysis of the
electro-physical properties of these systems is based on detailed study of
their structure by means of high-resolution X-ray diffractometry and
glancing-incidence reflection, which allow us to restore the depth profiles of
structural characteristics of the QWs and thin Mn containing layers. These
investigations show absence of Mn atoms inside the QWs. The quality of the
structures was also characterized by photoluminescence spectra from the QWs.
Transport properties reveal features inherent to ferromagnetic systems: a
specific maximum in the temperature dependence of the resistance and the
anomalous Hall effect (AHE) observed in samples with both "metallic" and
activated types of conductivity up to ~100 K. AHE is most pronounced in the
temperature range where the resistance maximum is observed, and decreases with
decreasing temperature. The results are discussed in terms of interaction of
2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations
related to random distribution of Mn atoms. The AHE values are compared with
calculations taking into account its "intrinsic" mechanism in ferromagnetic
systems.Comment: 15 pages, 9 figure
Linear polarization of the photoluminescence of quantum wells
The degree and orientation of the magnetic-field induced linear polarization
of the photoluminescence from a wide range of heterostructures containing
(Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a
function of detection photon energy, applied magnetic field strength and
orientation in the quantum well plane. A theoretical description of this effect
in terms of an in-plane deformation acting on the valence band states is
presented and is verified by comparison with the experimental data. We
attempted to identify clues to the microscopic origin of the valence band spin
anisotropy and to the mechanisms which actually determine the linear
polarization of the PL in the quantum wells subject to the in-plane magnetic
field. The conclusions of the present paper apply in full measure to
non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain
anisotropy.Comment: 21 pages, 10 figure
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
Theory of acceptor-ground-state description and hot photoluminescence in cubic semiconductors
- …