29 research outputs found
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High quality crystalline YBa2Cu3O7−δ films on thin silicon substrates
YBa2Cu3O7−δ(001) (YBCO)films with near perfect crystallinity have been grown epitaxially on Si(100) using two intermediate buffer layers: Yttrium‐stabilized zirconia (YSZ) and CeO2. All layers were grown by an in situpulsed laser deposition process. The new films have Rutherford backscattering spectroscopy minimum yields as low as 5%, compared to 12% for YBCOfilms deposited directly on YSZ. The superconducting onset is above 90 K with a transition width ΔT of 1 K. After film deposition the Si substrate could be etched from the back to give a circular, 2‐mm‐ diam, 4000 Å uniformly thick Si membrane with 300 Å YSZ, 80 Å CeO2, and 1500–3000 Å YBCO on top.Physic
Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe
Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe
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Absence of discontinuities in ion-channeling parameters for YBa2 Cu3O7−δ thin films
We have measured the ion-channeling minimum yield (χmin) and angular width (Ψ1/2) for Y, Ba, Cu, and O in 2000 Å (001)-oriented films of YBa2Cu3O7−δ on MgO. The measurements mapped out a 30 K region around the critical temperature (Tc) in 1–2 K steps, and Tc was determinednin situ. A O16(α,α)16O resonance was used to study the O motions. χmin increases and Ψ1/2 decreases with increasing temperature for all elements, as expected for a smooth increase in vibration amplitude. We see no anomalous jumps in either parameter, which differs from previous reports on YBa2Cu3O7−δ bulk single crystals.Physic