Strategy for large???scale monolithic Perovskite/Silicon tandem solar cell: A review of recent progress

For any solar cell technology to reach the final mass-production/commercialization stage, it must meet all technological, economic, and social criteria such as high efficiency, large-area scalability, long-term stability, price competitiveness, and environmental friendliness of constituent materials. Until now, various solar cell technologies have been proposed and investigated, but only crystalline silicon, CdTe, and CIGS technologies have overcome the threshold of mass-production/commercialization. Recently, a perovskite/silicon (PVK/Si) tandem solar cell technology with high efficiency of 29.1% has been reported, which exceeds the theoretical limit of single-junction solar cells as well as the efficiency of stand-alone silicon or perovskite solar cells. The International Technology Roadmap for Photovoltaics (ITRPV) predicts that silicon-based tandem solar cells will account for about 5% market share in 2029 and among various candidates, the combination of silicon and perovskite is the most likely scenario. Here, we classify and review the PVK/Si tandem solar cell technology in terms of homo- and hetero-junction silicon solar cells, the doping type of the bottom silicon cell, and the corresponding so-called normal and inverted structure of the top perovskite cell, along with mechanical and monolithic tandemization schemes. In particular, we review and discuss the recent advances in manufacturing top perovskite cells using solution and vacuum deposition technology for large-area scalability and specific issues of recombination layers and top transparent electrodes for large-area PVK/Si tandem solar cells, which are indispensable for the final commercialization of tandem solar cells

A low viscosity, low boiling point, clean solvent system for the rapid crystallisation of highly specular perovskite films

Perovskite-based photovoltaics have, in recent years, become poised to revolutionise the solar industry. While there have been many approaches taken to the deposition of this material, one-step spin-coating remains the simplest and most widely used method in research laboratories. Although spin-coating is not recognised as the ideal manufacturing methodology, it represents a starting point from which more scalable deposition methods, such as slot-dye coating or ink-jet printing can be developed. Here, we introduce a new, low-boiling point, low viscosity solvent system that enables rapid, room temperature crystallisation of methylammonium lead triiodide perovskite films, without the use of strongly coordinating aprotic solvents. Through the use of this solvent, we produce dense, pinhole free films with uniform coverage, high specularity, and enhanced optoelectronic properties. We fabricate devices and achieve stabilised power conversion efficiencies of over 18% for films which have been annealed at 100 °C, and over 17% for films which have been dried under vacuum and have undergone no thermal processing. This deposition technique allows uniform coating on substrate areas of up to 125 cm2, showing tremendous promise for the fabrication of large area, high efficiency, solution processed devices, and represents a critical step towards industrial upscaling and large area printing of perovskite solar cells

Research data supporting: "Long-range charge extraction in back-contact perovskite architectures via suppressed recombination"

Tainter_Joule_data.opj - Origin project file containing data underlying figures presented in the article. Original figures are presented and named as presented in the paper, as well as corresponding worksheets containing raw and smoothed data. Detailed origin worksheet breakdown: "Fig2Adata" and "Fig2Bdata" - data underlying scanning photocurrent measurements presented in figure 2, presenting position of measurement (relative to junction) and normalised current or characteristic rise time. "trplGlass, trplNiOx,trplSnO2" - time-resolved photoluminescence data performed on perovskites films deposited over glass, NiOx, and SnO2, respectively. Data for time delay and number of counts is presented, which is presented in figure 3A. "Fig3Boutput" - modeled charge density vs position as presented in figure 3b, details of model in the supporting information. "Fig4Cdata" - forward and reverse JV data given in V and mAcm-2 which is presented in Figures 4C and S8. "Fig4Ddata" - scanning photocurrent and scanning photoluminescence microscopy data as presented in figure 4D. Data is presented for position of measurement and photocurrent amplitude and PL intensity (norm.). "FigS2data" - Photoluminescence spectra obtained over the two materials in the active area of a device. Data is presented as wavelength vs counts (au). "FigS9data" - Peak short-circuit currents obtained for varying device pitch distance. Tainter_joule_tabulardata.xslx - Excel spreadsheet containing PLQE data and results of fitting several transport measurements as depicted in figure 2. Sheet 1 gives PLQEs for the measured films, sheet 2 provides extracted exponential decay factors and slopes of linear fits as obtained and described in figure 2 and the SI. IBC_0011 and IBC_0015 - Original SEM images of perovskite film over devices (top view). s4.bmp - Original SEM image of perovskite films and devices (cross section). This image is adapted in Figure 4b