Plasma Heating and Losses in Toroidal Multipole Fields

The heating and loss of plasmas have been studied in three pulsed, toroidal multipole devices: a large levitated octupole, a small supported octupole and a very .small supported quadrupole. Plasmas are produced by gun injection and heated by electron and ion cyclotron resonance heating and ohmic heating. Electron cyclotron heating rates have been measured over a wide range of parameters, and the results are in quantitative agreement with stochastic heating theory. Electron cyclotron resonance heating produces ions with energies larger than predicted by theory. With the addition of a toroidal field, ohmic heating gives densities as high as 10{sup 13}cm{sup -3} in the toroidal quadrupole and 10{sup 12}cm{sup -3} in the small octupole. Plasma losses for n=5 x 10{sup 9}cm{sup -3} plasmas are inferred from Langmuir probe and Fabry-Perot interferometer measurements, and measured with special striped collectors on the wall and rings. The loss to a levitated ring is measured using a modulated light beam telemeter. The confinement is better than Bohm but considerably worse than classical. Low frequency convective cells which are fixed in space are observed. These cells around the ring are diminished when a weak toroidal field is added, and loss collectors show a vastly reduced flux to the rings. Analysis of the spatial density profile shows features of B-independent diffusion. The confinement is sensitive to some kinds of dc field errors, but surprisingly insensitive to perturbations of the ac confining field

Real-Time Measurement of Thin Film Thickness During Plasma Processing

An in situ single point two-color laser interferometer is used to monitor in real-time the thickness of thin transparent films during processing. The instantaneous change of film thickness is determined by comparing the measured laser reflection interference to that calculated by a model. The etch or deposition rates of the film are determined within 1–2 seconds. The film thickness is also determined in real-time from the phase difference of the reflected laser intensity between the two laser colors. Use of two-color laser interferometry improves the accuracy of the calculated etch or growth rates of the film considerably. Moreover, the two colors provide a clear distinction between film etching and deposition, which may often occur during the same process, and can not be determined by a single color interferometer. The uniformity of the film's etch or deposition rates across the substrate is monitored by an in situ full-wafer image interferometer. The combined use of these two sensors provide instantaneous information of the film thickness, etch or growth rates, as well as time averaged uniformity of the process rates. This diagnostic setup is very useful for process development and monitoring, which is also suitable for manufacturing environment, and can be used for real-time process control.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/45461/1/11088_2004_Article_412642.pd

Analysis of loop voltage evolution in current drive experiments in the Phaedrus-T tokamak

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Laser-Induced Fluorescence Measurement of the Dynamics of a Pulsed Planar Sheath

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