New type of ellipsometry in infrared spectroscopy: The double-reference method

We have developed a conceptually new type of ellipsometry which allows the determination of the complex refractive index by simultaneously measuring the unpolarized normal-incidence reflectivity relative to the vacuum and to another reference media. From these two quantities the complex optical response can be directly obtained without Kramers-Kronig transformation. Due to its transparency and large refractive index over a broad range of the spectrum, from the far-infrared to the soft ultraviolet region, diamond can be ideally used as a second reference. The experimental arrangement is rather simple compared to other ellipsometric techniques.Comment: submitted to Appl. Phys. Let

Single-element rotating-polarizer ellipsometer for film-substrate systems

A novel and very simple ellipsometer for the characterization of film-substrate systems that employs one rotating optical element (a polarizer) is proposed. The ellipsometer is based on detecting the angles of incidence at which a film-substrate system has equal amplitude attenuations for light polarized parallel (p) and perpendicular (s) to the plane of incidence. At a certain wavelength, the film thickness of the filmsubstrate system has to lie within permissible-thickness bands (PTB) for the technique to apply

Principal angle, principal azimuth, and principal-angle ellipsometry of film-substrate systems

When the film thickness is considered as a parameter, a system composed of a transparent film on an absorbing substrate (in a transparent ambient) is characterized by a range of principal angle ø¯min ≤ ø¯ ≤ ø¯max over which the associated principal azimuth ψ¯ varies between 0° and 90° (i.e., 0° ≤ ψ¯ ≤ 90°) and the reflection phase difference Δ assumes either one of the two values: +π/2 or −π/2. We determine the principal angle ø¯(d) and principal azimuth ψ¯(d) as functions of film thickness d for the vacuum-SiO2-Si system at several wavelengths as a concrete example. When the film thickness exceeds a certain minimum value, more than one principal angle becomes possible, as can be predicted by a simple graphical construction. We apply the results to principal-angle ellipsometry. (PAE) of film-substrate systems; the relationship between ø¯ and ψ¯ during film growth is particularly interesting

Constant-psi constant-delta contour maps: applications to ellipsometry and to reflection-type optical devices

Constant-psi constant-delta contour maps in the reduced angle-of-incidence-film-thickness plane that are useful in ellipsometry and in design of reflection-type optical devices are discussed. As a specific example, a contour map is given for the SiO2-Si film-substrate system at the 6328-Å He-Ne laser wavelength

Constant-psi constant-delta contour maps: applications to ellipsometry and to reflection-type optical devices

Constant-psi constant-delta contour maps in the reduced angle-of-incidence-film-thickness plane that are useful in ellipsometry and in design of reflection-type optical devices are discussed. As a specific example, a contour map is given for the SiO2-Si film-substrate system at the 6328-Å He-Ne laser wavelength

Extreme ultraviolet polarizing optics using bare and aluminum-coated silicon carbide

A deformable three-reflection system that uses a bare silicon carbide substrate can function as an in-line, high-throughput (\u3e30%), 90° phase shifter in the 50–100 nm spectral range. For a given extreme ultraviolet wavelength, an aluminum thin film can be deposited on the silicon carbide substrate to suppress the parallel (p) or perpendicular (s) polarization on single reflection or to introduce quarter-wave retardation and equal reflectances for incident p- and s-polarized light

Extreme ultraviolet polarizing optics using bare and aluminum-coated silicon carbide

A deformable three-reflection system that uses a bare silicon carbide substrate can function as an in-line, high-throughput (\u3e30%), 90° phase shifter in the 50–100 nm spectral range. For a given extreme ultraviolet wavelength, an aluminum thin film can be deposited on the silicon carbide substrate to suppress the parallel (p) or perpendicular (s) polarization on single reflection or to introduce quarter-wave retardation and equal reflectances for incident p- and s-polarized light