Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel

A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represent a step towards the spin-based quantum bit in Si/SiGe heterostructures.Comment: 3 pages, 4 fig

Defect interactions in Sn_1-<i>x</i>Ge_<i>x</i> random alloys

Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results

Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields

The spin relaxation in a 1D InAs quantum dot with the Rashba spin-orbit coupling under driving THz magnetic fields is investigated by developing the kinetic equation with the help of the Floquet-Markov theory, which is generalized to the system with the spin-orbit coupling, to include both the strong driving field and the electron-phonon scattering. The spin relaxation time can be effectively prolonged or shortened by the terahertz magnetic field depending on the frequency and strength of the terahertz magnetic field. The effect can be understood as the sideband-modulated spin-phonon scattering. This offers an additional way to manipulate the spin relaxation time.Comment: 8 pages, 1 figure, to be published in PR

Enhancing Bremsstrahlung Production From Ultraintense Laser-Solid Interactions With Front Surface Structures

We report the results of a combined study of particle-in-cell and Monte Carlo modeling that investigates the production of Bremsstrahlung radiation produced when an ultraintense laser interacts with a tower-structured target. These targets are found to significantly narrow the electron angular distribution as well as produce significantly higher energies. These features combine to create a significant enhancement in directionality and energy of the Bremstrahlung radiation produced by a high-Z converter target. These studies employ short-pulse, high intensity laser pulses, and indicate that novel target design has potential to greatly enhance the yield and narrow the directionality of high energy electrons and $\gamma$-rays. We find that the peak $\gamma$-ray brightness for this source is 6.0$\times$10$^{19}$ ${\rm s^{-1}mm^{-2}mrad^{-2}}$ at 10MeV and 1.4$\times$10$^{19}$ ${\rm s^{-1}mm^{-2}mrad^{-2}}$ at 100MeV (0.1$\%$ bandwidth).Comment: arXiv admin note: text overlap with arXiv:1310.328

<i>E</i> centers in ternary Si_1-<i>x-y</i>Ge_<i>x</i>Sn_<i>y</i> random alloys

Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1-x-yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125