Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high rectification ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky-Mott limit. The sensitivity to hydrogen of the diodes was measured in the flow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously

Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high rectification ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky-Mott limit. The sensitivity to hydrogen of the diodes was measured in the flow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously

Study of the influence of the rare-earth elements on the properties of lead iodide.

Lead iodide (PbI2) shows excellent electronic properties for detection of ionizing radiation. We report the introduction of rare-earth elements and other elements as admixtures during synthesis to study their influence on the quality of single crystals. Synthesized material as well as single crystals have been characterized by measurements of electrical resistivity and low-temperature photo luminescence and index of refraction. The structural quality with respect to polytypes was analysed by electron back scatter diffraction. Makyoh topography was applied for surface studies. © 2009, Elsevier Ltd

Photoabsorption and the unoccupied partial density of states of chemisorbed molecules

The 1s to 2π* resonances have been studied for CO strongly chemisorbed on Ni(100) and weakly chemisorbed on Cu(100) using high resolution X-ray absorption spectroscopy. We show that the spectra can be consistently described in terms of the local density of unoccupied 2π* electron states with the Fermi level obtained from corresponding X-ray photoelectron spectra. The core hole is demonstrated to induce large shifts in the unoccupied 2π* density of states