Growth of Oriented Au Nanostructures: Role of Oxide at the Interface

We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements were performed to determine the morphology, orientation of the structures and the nature of oxide layer. Interfacial oxide layer, low vacuum and high temperature annealing conditions are found to be necessary to grow oriented gold structures. These gold structures can be transferred by simple scratching method.Comment: 13 pages, 3 figures, Accepted in J. Appl. Phy

El último Naturalista

El libro contiene catorce capítulos dedicados a diferentes facetas de la extensa actividad científica de este naturalista además de un prólogo escrito por Carlos Martín Escorza, del Museo Nacional de Ciencias Naturales, y una presentación por Emilio Cervantes (Coordinador de la Edición).Capítulo quinto en el libro dedicado al importante naturalista español Mariano de la Paz Graells y Agüera en el doscientos aniversario de su nacimiento.El libro se publicó por el Instituto de Estudios RiojanosPeer reviewe

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Dynamic and Static Transmission Electron Microscopy Studies on Structural Evaluation of Au nano islands on Si (100) Surface

Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 850\degreeC) real time TEM measurements showed the evaluation of gold nanoparticles into rectangular/square shaped gold silicide structures. This has been attributed to selective thermal decomposition of native oxide layer. Ex-situ annealing in low vacuum (10-2 mbar) at 850\degreeC showed no growth of nano-gold silicide structures. Under low vacuum annealing conditions, the creation of oxide could be dominating compared to the decomposition of oxide layers resulting in the formation of barrier layer between Au and Si.Comment: 15 pages, 4 figure