Measurement of spontaneous emission from a two-dimensional photonic band gap defined microcavity at near-infrared wavelengths

An active, photonic band gap-based microcavity emitter in the near infrared is demonstrated. We present direct measurement of the spontaneous emission power and spectrum from a microcavity formed using a two-dimensional photonic band gap structure in a half wavelength thick slab waveguide. The appearance of cavity resonance peaks in the spectrum correspond to the photonic band gap energy. For detuned band gaps, no resonances are observed. For devices with correctly tuned band gaps, a two-time enhancement of the extraction efficiency was demonstrated compared to detuned band gaps and unpatterned material

Photonic bandgap disk laser

A two-dimensional photonic crystal defined hexagonal disk laser which relies on Bragg reflection rather than the total internal reflection as in traditional microdisk lasers is described. The devices are fabricated using a selective etch to form free standing membranes suspended in air. Room temperature lasing at 1650nm for a 150nm thick, ~15μm wide cavity fabricated in InP/GaAsP is demonstrated with pulsed optical pumping

Nanoscale quantum dot infrared sensors with photonic crystal cavity

We report high performance infrared sensors that are based on intersubband transitions in nanoscale self-assembled quantum dots combined with a microcavity resonator made with a high-index-contrast two-dimensional photonic crystal. The addition of the photonic crystal cavity increases the photocurrent, conversion efficiency, and the signal to noise ratio (represented by the specific detectivity D*) by more than an order of magnitude. The conversion efficiency of the detector at Vb=–2.6 V increased from 7.5% for the control sample to 95% in the PhC detector. In principle, these photonic crystal resonators are technology agnostic and can be directly integrated into the manufacturing of present day infrared sensors using existing lithographic tools in the fabrication facility

Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity

We developed a general numerical method to calculate the spontaneous emission lifetime in an arbitrary microcavity, using a finite-difference time-domain algorithm. For structures with rotational symmetry we also developed a more efficient but less general algorithm. To simulate an open radiation problem, we use absorbing boundaries to truncate the computational domain. The accuracy of this method is limited only by numerical error and finite reflection at the absorbing boundaries. We compare our result with cases that can be solved analytically and find excellent agreement. Finally, we apply the method to calculate the spontaneous emission lifetime in a slab waveguide and in a dielectric microdisk, respectively

Self-optimization of optical confinement in ultraviolet photonic crystal slab laser

We studied numerically and experimentally the effects of structural disorder on the performance of ultraviolet photonic crystal slab lasers. Optical gain selectively amplifies the high-quality modes of the passive system. For these modes, the in-plane and out-of-plane leakage rates may be automatically balanced in the presence of disorder. The spontaneous optimization of in-plane and out-of-plane confinement of light in a photonic crystal slab may lead to a reduction of the lasing threshold.Comment: 5 pages, 5 figure

Fabrication technologies for quantum cascade photonic-crystal microlasers

In this paper we describe the technological and fabrication methods necessary to incorporate both photonic and electronic-band engineering in order to create novel surface-emitting quantum cascade microcavity laser sources. This technology offers the promise of several innovative applications such as the miniaturization of QC lasers, and multi-wavelength two-dimensional laser arrays for spectroscopy, gas-sensing and imaging. This approach is not limited to light-emitting devices, and may be efficiently applied to the development of mid- and far-infrared normal-incidence detectors

Fabrication methods for a quantum cascade photonic crystal surface emitting laser

Conventional quantum cascade (QC) lasers are intrinsically edge-emitting devices with mode confinement achieved via a standard mesa stripe configuration. Surface emission in edge emitting QC lasers has therefore necessitated redirecting the waveguided laser emission using a second order grating. This paper describes the methods used to fabricate a 2D photonic crystal (PC) structure with or without a central defect superimposed on an electrically pumped QC laser structure with the goal of achieving direct surface emission. A successful systematic study of PC hole radius and spacing was performed using e-beam lithography. This PC method offers the promise of a number of interesting applications, including miniaturization and integration of QC lasers

Quantum cascade photonic crystal surface emitting injection laser

A surface emitting quantum cascade injection laser is presented. Direct surface emission is obtained by using a 2D photonic-band-gap structure that simultaneously acts as a microcavity. The approach may allow miniaturization and on-chip-integration of the devices

Feasibility of detecting single atoms using photonic bandgap cavities

We propose an atom-cavity chip that combines laser cooling and trapping of neutral atoms with magnetic microtraps and waveguides to deliver a cold atom to the mode of a fiber taper coupled photonic bandgap (PBG) cavity. The feasibility of this device for detecting single atoms is analyzed using both a semi-classical treatment and an unconditional master equation approach. Single-atom detection seems achievable in an initial experiment involving the non-deterministic delivery of weakly trapped atoms into the mode of the PBG cavity.Comment: 11 pages, 5 figure

Edge-emitting quantum well laser with integrated intracavity electrostatic gate

Ridge waveguide, edge-emitting single quantum well GaAs lasers with an integrated gating electrode have been fabricated. These devices integrate a MESFET structure with the laser PN junction so that the SBD (Schottky barrier diode) depletion layer can be used for transverse current confinement in the laser. Device fabrication was very simple requiring only an anisotropic etch for waveguide definition followed by a single self-aligned contact deposition step. The Schottky barrier depletion layers on either side of the ridge waveguide act to confine free carriers. This structure allows for separation of the optical and electrical confinement in the transverse direction without requiring complex fabrication. The device demonstrated modulation of the pulsed lasing threshold with gate control voltage on a 30 micron wide ridge. Above threshold, increasing power output with increasing gate voltage was demonstrated with negligible gate current. The multimode lasing spectrum showed that the increased power output occurred for all modes with no shift in the mode wavelengths to within the resolution of the measurement system