Giant microwave photoresistance of two-dimensional electron gas

We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (\Delta R)/R of up to 250 percent. The photoresistance is apparently proportional to the square root of applied power, and disappears as the temperature is increased.Comment: 4 pages, 3 figure

Avaliação de cultivares de trigo de duplo propósito, recomendados para cultivo no estado do Rio Grande do Sul.

bitstream/CNPT-2010/37413/1/Comunicado-137.pd

Avaliação de cultivares de trigo de duplo propósito, recomendados para cultivo no estado do Rio Grande do Sul.

bitstream/item/31090/1/Comunicado-137.pd

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.Comment: 4 pages, 3 figures, to be published in Applied Physics Letter

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.Comment: 11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev.