Reduced order models of integrated RF spiral inductors with geometrical and technological automatic parameterization

In this paper a method is presented for automatically generating a parameterized model of integrated inductors accounting for geometry and substrate effects. A multiparameter Krylov-subspace based moment matching method is used to reduce the three-dimensional integral equations describing the EM behavior of the inductor over the substrate. Parameterization enables optimization of geometry and substrate technology simultaneously

Film pressure-area isotherms of monolayers of diethylene and triethylene glycol monooctadecyl ether and of diethylene glycol monodocosyl ether on water

The film pressure-area isotherms of monolayers on a water surface for diethylene glycol monooctadecyl ether C<SUB>18</SUB>·(OC<SUB>2</SUB>H<SUB>4</SUB>)<SUB>2</SUB>OH, triethylene glycol monooctadecyl ether C<SUB>18</SUB>·(OC<SUB>2</SUB>H<SUB>4</SUB>)<SUB>8</SUB>OH, and diethylene glycol monodocosyl ether C<SUB>22</SUB>·(OC<SUB>2</SUB>H<SUB>4</SUB>)<SUB>2</SUB>OH in the temperature range 15°-35°C. are reported. The C<SUB>18</SUB>-compounds exhibit the expanded type whereas the C<SUB>22</SUB>·(OC<SUB>2</SUB>H<SUB>4</SUB>)<SUB>2</SUB>OH exhibits condensed films in this range, and even at high film pressures of 40 dynes/cm. none of these indicated the presence of the solid phase. The area at zero compression for the L<SUB>0</SUB> state is ·27-28A<SUP>2</SUP> for the C<SUB>18</SUB>· and C<SUB>22</SUB>·(OC<SUB>2</SUB>H<SUB>4</SUB>)<SUB>2</SUB>OH, and ·33A<SUP>2</SUP> for C<SUB>18</SUB>·(OC<SUB>2</SUB>H<SUB>4</SUB>)<SUB>3</SUB>OH. The results have been compared with those for the long-chain fatty alcohols (C<SUB>n</SUB>-OH) and their monoethylene oxide condensation products C<SUB>n</SUB>-OC<SUB>2</SUB>H<SUB>4</SUB>OH. The lowering of the film expansion temperature with the addition of an ethylene oxide unit is continued in the former two compounds as seen previously for C<SUB>14</SUB>· and C<SUB>16</SUB>·OC<SUB>2</SUB>H<SUB>4</SUB>OH in this temperature range

Introduction to the Special Issue on the 2010 IEEE International Solid-State Circuits Conference

X110sciescopu

A reconfigurable low-noise amplifier using a tunable active inductor for multistandard receivers

A reconfigurable low-noise amplifier (LNA) based on a high-value active inductor (AI) is presented in this paper. Instead of using a passive on-chip inductor, a high-value on-chip inductor with a wide tuning range is used in this circuit and results in a decrease in the physical silicon area when compared to a passive inductor-based implementation. The LNA is a common source cascade amplifier with RC feedback. A tunable active inductor is used as the amplifier output load, and for input and output impedance matching, a source follower with an RC network is used to provide a 50 Ω impedance. The amplifier circuit has been designed in 0.18 µm CMOS process and simulated using the Cadence Spectra circuit simulator. The simulation results show a reconfigurable frequency from 0.8 to 2.5 GHz, and tuning of the frequency band is achieved by using a CMOS voltage controlled variable resistor. For a selected 1.5 GHz frequency band, simulation results show S 21 (Gain) of 22 dB, S 11 of −18 dB, S 22 of −16 dB, NF of 3.02 dB, and a minimum NF (NFmin) of 1.7 dB. Power dissipation is 19.6 mW using a 1.8 V dc power supply. The total LNA physical silicon area is (200×150) µm2