Modeling of charge and quantum capacitance in low effective mass III-V FinFETs

In this paper we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrodinger-Poisson equation for FinFET with various channel thickness and effective mass.by Mohit D. Ganeriwala, Chandan Yadav, Nihar R. Mohapatra and Sourabh Khandelwa

A compact model for III–V nanowire electrostatics including band non-parabolicity

The III–V materials have a highly non-parabolic band structure that significantly affects the MOS transistor electrostatics. The compact models used to simulate circuits involving III–V MOS transistors must account for this band structure non-parabolicity for accurate results. In this work, we propose a modification to the energy dispersion relation to include the band structure non-parabolicity in a way suitable for compact models. Unlike the available non-parabolic energy dispersion relation, the one proposed here is simple and includes the non-parabolicity in both confinement and transport directions. The proposed dispersion relation is then used to model the electrostatics of III–V nanowire transistors. The proposed model is scalable to a higher number of sub-bands and computationally efficient for circuit simulators. The model is also validated with the data from a 2D Poisson–Schrödinger solver for a wide range of nanowire dimensions, III–V channel materials, and found to be in excellent agreement with the simulation data