Effects of CdCl2 treatment on deep levels in CdTe and their implications on thin film solar cells; A comprehensive photoluminescence study

This work is aimed at studying defect level distributions in the bandgap of CdTe thin films, used for solar cell development. In particular, the effects of CdCl2 treatment on the defect levels are the main objectives of this research. Four different CdTe thin films were electroplated using three different Cd-precursors (CdSO4, Cd(NO3)2 and CdCl2), and bulk CdTe wafers purchased from industry (Eagle Pitcher and University Wafers in US) were studied using low temperature photoluminescence. The finger prints of defects, 0.55 eV below the conduction band down to the valence band edge were investigated. In all of the CdTe layers, four electron trap levels were observed with varying intensities but at very similar energy positions, indicating that the origin of these defects are mainly from native defects. CdCl2 treatment and annealing eliminates two defect levels and the mid-gap recombination centres are reduced drastically by this processing step. The optical bandgap of all four as-deposited CdTe layers is ~1.50 eV, and reduces to ~1.47 eV after CdCl2 treatment. The material grown using the CdCl2 precursor seems to produce CdTe material with the cleanest bandgap, most probably due to the built-in CdCl2 treatment while growing the material

Progress in development of graded bandgap thin film solar cells with electroplated materials

Photovoltaic devices are developed mainly based on p-n or p-i-n type device structures, and these devices can utilise only a fraction of the solar spectrum. In order to further improve device parameters and move towards low-cost and high-efficiency next generation solar cells, device architectures capable of harvesting all photons available should be designed and developed. One such architecture is the fully graded bandgap device structure as proposed recently based on both n-type and p-type window layers. These designs have been experimentally tested using well researched GaAs/AlGaAs system producing impressive device parameters of open circuit voltage (Voc) ~1175 mV and fill factor (FF) ~0.85. The devices have also been experimentally tested for the evidence of impurity photovoltaic (PV) effect and impact ionisation taking place within the same device. Since these structures have been experimentally proved with a well-established semiconductor, the effort has been focussed on developing these devices using low-cost and scalable electroplated semiconductors, in order to minimise manufacturing cost. This paper reviews and summarises the work carried out during the past decade on this subject. Graded bandgap devices produced using only two or three electroplated semiconductor layers have been explored and their conversion efficiencies have gradually increased from 10.0%, through 12.8% to 15.3% for different structures. While the work is progressing along this line, the paper summarises the achievements to date

Social media as a marketing tool: a study with reference to first time voters in the university of Colombo

Today’s political marketers are successfully driving target voters towards favourable attitude change (Henneberg, 2002). The first time voter group is an important target market in political marketing, and as identified in literature, social media and peer groups play a major role in influencing political attitudes of first time voters.This study aims to explore how first time voters form their political attitudes, from exposure to social media political campaigns and from online peer interactions. The Processes of Compliance, Identification and Internalization in the Social Influence theory was used as a theoretical lens; data was gathered through 21 semi-structured in-depth interviews, and thematic Analysis was used to analyze data, under an exhaustive coding process.Research findings indicate that first time voters’ political attitudes were mostly formed and driven on achieving personal goals; that is, individuals were more concerned with the long lasting effects of value congruence (Internalization), rather than the social effect (Compliance) or social anchorage (Identification) of behaviour. Further, online peer interactions on social media was a strong source of influence (for political attitude formation), than mere passive exposure to political campaigns on social media. The most influential peers were ‘high status peers’ with direct political connections, acting as strong opinion leaders. Furthermore, first time voters are influenced due to the perceived credibility of peers (through Internalization), as opposed to their controlling power (Compliance) or attractiveness (Identification).The Kelaniya Journal of Management, Vol. 3(1); 2014: 42-62</p

An investigation into the effect of rate of stirring of bath electrolyte on the properties of electrodeposited CdTe thin film semiconductors

Electrodeposition (ED) has been recognized as a low cost and scalable technique available for fabrication of CdS/CdTe solar cells. Photovoltaic activity of these electrodeposited semiconductor materials drastically depends on the ED growth parameters namely; electrodeposition potential, concentrations and ratios of concentrations of precursors used to prepare the bath electrolyte, pH of the electrolyte, deposition temperature and rate of stirring of the electrolyte. In order to grow thin films with good photovoltaic properties, it is essential to maintain these variables at their optimum ranges of values during electrodepositions. Hence, this study was conducted to investigate the dependence of the properties of electrodeposited CdTe thin film material on the rate of stirring of the bath electrolyte. The CdTe material was grown on glass/FTO (23 cm2) and glass/FTO/CdS (23 cm2) surfaces in bath electrolytes containing 1.0 mol/L CdSO4 and 1.0 mmol/L TeO2 solutions at different rates of stirring within the range of 0-350 rpm while keeping the values of pH of the electrolyte, deposition temperature and cathodic deposition potential with respect to the saturated calomel electrode at 2.3, 65 °C and 650 mV respectively. After the heat treatment at 400 °C in air atmosphere, the deposited samples with a good visual appearance were selected and evaluated based on their morphological, elemental, structural, optical and electrical properties in order to identify the optimum range of rate of stirring for electrodeposition of CdTe thin film semiconductors. Results revealed that, rates of stirring in the range of 60-85 rpm in a 100 mL volume of electrolyte containing the substrate and the counter electrodes in the center of the bath with a separation of 2.0 cm between them can electrodeposit CdTe layers exhibiting required levels of morphological, structural, optical and electrical properties on both glass/FTO and glass/FTO/CdS surfaces

How do electronic carriers cross Si-bound alkyl monolayers?

Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, current depends strongly on temperature but not on molecular length, suggesting transport by thermionic emission over a barrier in the Si. At higher voltage, the current decreases exponentially with molecular length, suggesting tunneling through the molecules. The tunnel barrier is estimated, from transport and photoemission data, to be ~1.5 eV with a 0.25me effective mass.Comment: 13 pages, 3 figure

Effect of iodine incorporation on characteristic properties of cadmium telluride deposited in aqueous solution

The electrodeposition of polycrystalline I-doped CdTe was successfully performed from aqueous solutions containing cadmium nitrate (Cd(NO3)2 and tellurium oxide (TeO2). The effects of different I-doping concentrations in the electrolytic bath on the deposited CdTe layers deposited were evaluated structurally, optically, morphologically and electronically using X-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current (DC) conductivity test respectively. The XRD show reduction in the (111) cubic CdTe peak intensity and the calculated crystallite size of the CdTe:I layers above 5 ppm I-doping. At I-doping of 1000 ppm of the CdTe-bath and above, the deposition of only crystalline Te due to the formation of Cd-I complexes debarring the deposition of Cd and co-deposition of CdTe in aqueous solution was observed. Morphologically, reductions in grain size were observed above 5 ppm I-doping with high pinhole density and the formation of cracks within the CdTe:I layers. For the as-deposited CdTe:I layers, conduction type remained n-type across all the explored I-doping concentration of 200 ppm. For the CdCl2 and Ga2(SO4)2+CdCl2 treated CdTe:I layers, the transition from n- to p-type conductivity was observed for the CdTe:I baths doped with 20 ppm and above due to the reduced cadmium deposition on the substrate. The highest conductivity was observed at 5 ppm I-doping of the CdTe-bath. Observations made on the CdTe:I in aqueous solution differs from the non-aqueous solvent documented in the literature. These results are reported systematically in this communication

Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces

We have performed photoluminescence (PL) measurements on chemically etched single‐crystal p‐CdTe. In addition, x‐ray photoemission measurements have been used as a guide to surface stoichiometry for each chemical treatment. The relative intensities of the 0.875±0.005 eV and 1.125±0.005 eV PL bands are seen to be linked to the preferential depletion of either Cd or Te from the CdTe surface. Furthermore, the energies of these deep level transitions measured at T=4 K show remarkable agreement with the two values of Schottky barrier, Φb=0.72±0.02 eV and Φb=0.93±0.02 eV, normally obtained at room temperature for Au and Sb contacts to n‐CdTe

Electroplating of CdTe thin films from cadmium sulphate precursor and comparison of layers grown by 3-electrode and 2-electrode systems

Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E) and two-electrode (2E) systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors

In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.Comment: 12 pages, 11 figure