Simulations of mid infrared emission of InAsN semiconductors

This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors

Transient Response of Electrons and Phonons in ZnTe Crystals

The response of electron and phonon ensemble to the switching on and off electric field E in n-type ZnTe crystals is simulated by Monte Carlo method. The results at T=10 K show significant accumulation of LO-phonons and the LO phonon band population inversion with respect to the LA band;the inversion is necessary for the stimulated transfer of LO-LA energy difference to photons. The maximum inversion is at E=7 kV/cm. At T=300 K no phonon band inversion but fast (sub-picosecond) drift velocity switching with ≈100 GHz repetition is feasible

LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields

Electron and phonon distribution in momentum space is modeled using Monte Carlo method. Calculated LO phonon distribution in zinc-blende GaN deviates dramatically from the thermal equilibrium (Planck) function, and well coincides with the phonon number elucidated from the existing anti-Stokes Raman scattering experiments