Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings

We measure an anomalous magnetoresistance peak within the lowest Landau level (nu = 1) minimum of a two-dimensional hole system on (110) GaAs. Self-consistent calculations of the valence band mixing show that the two lowest spin-index Landau levels anticross in a perpendicular magnetic field B consistent with where the experimental peak is measured, Bp. The temperature dependence of the anomalous peak height is interpreted as an activated behavior across this anticrossing gap. Calculations of the spin polarization in the lowest Landau levels predict a rapid switch from about -3/2 to +3/2 spin at the anticrossing. The peak position Bp is shown to be affected by the confinement electrostatics, and the utility of a tunable anticrossing position for spintronics applications is discussed.Comment: 4 pages, 4 figure

Kondo effect in a few-electron quantum ring

A small quantum ring with less than 10 electrons was studied by transport spectroscopy. For strong coupling to the leads a Kondo effect is observed and used to characterize the spin structure of the system in a wide range of magnetic fields. At small magnetic fields Aharonov-Bohm oscillations influenced by Coulomb interaction appear. They exhibit phase jumps by $\pi$ at the Coulomb-blockade resonances. Inside Coulomb-blockade valleys the Aharonov-Bohm oscillations can also be studied due to the finite conductance caused by the Kondo effect. Astonishingly, the maxima of the oscillations show linear shifts with magnetic field and gate voltage.Comment: 4 pages, 4 figure

Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.Comment: 4 pages, 3 figure

Highly efficient single photon emission from single quantum dots within a two-dimensional photonic bandgap

We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic crystal we measure directly an external quantum efficiency up to 26%, much higher than for quantum dots on the same sample without a tailored photonic environment. The results show that highly efficient quantum dot single photon sources can be realized, without the need for complex nanopositioning techniques

Efficient Spatial Redistribution of Quantum Dot Spontaneous Emission from 2D Photonic Crystals

We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a comparable factor. Our findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within 2D-photonic crystals are suitable for practical single photon sources with high external efficiency

Aharonov-Bohm oscillations of a tunable quantum ring

With an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs-heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.Comment: 3 pages, 3 figure

Activated Transport in the individual Layers that form the νT\nu_T=1 Exciton Condensate

We observe the total filling factor $\nu_{T}$=1 quantum Hall state in a bilayer two-dimensional electron system with virtually no tunnelling. We find thermally activated transport in the balanced system with a monotonic increase of the activation energy with decreasing $d/\ell_B$ below 1.65. In the imbalanced system we find activated transport in each of the layers separately, yet the activation energies show a striking asymmetry around the balance point. This implies that the gap to charge-excitations in the {\em individual} layers is substantially different for positive and negative imbalance.Comment: 4 pages. 4 figure

Electrical control of the exciton-biexciton splitting in a single self-assembled InGaAs quantum dots

We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton