Negative local resistance caused by viscous electron backflow in graphene

Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above liquid nitrogen temperature. Under these conditions, electrons can behave as a viscous liquid and exhibit hydrodynamic phenomena similar to classical liquids. Here we report strong evidence for this transport regime. We find that doped graphene exhibits an anomalous (negative) voltage drop near current injection contacts, which is attributed to the formation of submicrometer-size whirlpools in the electron flow. The viscosity of graphene's electron liquid is found to be ~0.1 m$^2$ /s, an order of magnitude larger than that of honey, in agreement with many-body theory. Our work shows a possibility to study electron hydrodynamics using high quality graphene

Measuring Hall Viscosity of Graphene's Electron Fluid

Materials subjected to a magnetic field exhibit the Hall effect, a phenomenon studied and understood in fine detail. Here we report a qualitative breach of this classical behavior in electron systems with high viscosity. The viscous fluid in graphene is found to respond to non-quantizing magnetic fields by producing an electric field opposite to that generated by the classical Hall effect. The viscous contribution is large and identified by studying local voltages that arise in the vicinity of current-injecting contacts. We analyze the anomaly over a wide range of temperatures and carrier densities and extract the Hall viscosity, a dissipationless transport coefficient that was long identified theoretically but remained elusive in experiment. Good agreement with theory suggests further opportunities for studying electron magnetohydrodynamics.Comment: 18 pages, 9 figure

A Universal Critical Density Underlying the Physics of Electrons at the LaAlO3/SrTiO3 Interface

The two-dimensional electron system formed at the interface between the insulating oxides LaAlO3 and SrTiO3 exhibits ferromagnetism, superconductivity, and a wide range of unique magnetotransport properties. A key challenge is to find a unified microscopic mechanism that underlies these emergent phenomena. Here we show that a universal Lifshitz transition between d-orbitals lies at the core of the observed transport phenomena in this system. Our measurements find a critical electronic density at which the transport switches from single to multiple carriers. This density has a universal value, independent of the LaAlO3 thickness and electron mobility. The characteristics of the transition, its universality, and its compatibility with spectroscopic measurements establish it as a transition between d-orbitals of different symmetries. A simple band model, allowing for spin-orbit coupling at the atomic level, connects the observed universal transition to a range of reported magnetotransport properties. Interestingly, we also find that the maximum of the superconducting transition temperature occurs at the same critical transition, indicating a possible connection between the two phenomena. Our observations demonstrate that orbital degeneracies play an important role in the fascinating behavior observed so far in these oxides

Micromagnetometry of two-dimensional ferromagnets

The study of atomically thin ferromagnetic crystals has led to the discovery of unusual magnetic behaviour and provided insight into the magnetic properties of bulk materials. However, the experimental techniques that have been used to explore ferromagnetism in such materials cannot probe the magnetic field directly. Here, we show that ballistic Hall micromagnetometry can be used to measure the magnetization of individual two-dimensional ferromagnets. Our devices are made by van der Waals assembly in such a way that the investigated ferromagnetic crystal is placed on top of a multi-terminal Hall bar made from encapsulated graphene. We use the micromagnetometry technique to study atomically thin chromium tribromide (CrBr3). We find that the material remains ferromagnetic down to monolayer thickness and exhibits strong out-of-plane anisotropy. We also find that the magnetic response of CrBr3 varies little with the number of layers and its temperature dependence cannot be described by the simple Ising model of two-dimensional ferromagnetism.Comment: 19 pages, 12 figure

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillations that do not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few T. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work points at unexplored physics in Hofstadter butterfly systems at high temperatures

Gate-tunable giant nonreciprocal charge transport in noncentrosymmetric oxide interfaces

A polar conductor, where inversion symmetry is broken, may exhibit directional propagation of itinerant electrons, i.e., the rightward and leftward currents differ from each other, when time-reversal symmetry is also broken. This potential rectification effect was shown to be very weak due to the fact that the kinetic energy is much higher than the energies associated with symmetry breaking, producing weak perturbations. Here we demonstrate the appearance of giant nonreciprocal charge transport in the conductive oxide interface, LaAlO3/SrTiO3, where the electrons are confined to two-dimensions with low Fermi energy. In addition, the Rashba spin???orbit interaction correlated with the sub-band hierarchy of this system enables a strongly tunable nonreciprocal response by applying a gate voltage. The observed behavior of directional response in LaAlO3/SrTiO3 is associated with comparable energy scales among kinetic energy, spin???orbit interaction, and magnetic field, which inspires a promising route to enhance nonreciprocal response and its functionalities in spin orbitronics

Optimal Path Planning for Unmanned Combat Aerial Vehicles to Defeat Radar Tracking

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/76140/1/AIAA-14303-218.pd

Neurobiological foundations of multisensory integration in people with autism spectrum disorders: the role of the medial prefrontal cortex.

This review aims to relate the sensory processing problems in people with autism spectrum disorders (ASD), especially multisensory integration (MSI), to the role of the medial prefrontal cortex (mPFC) by exploring neuroanatomical findings; brain connectivity and Default Network (DN); global or locally directed attention; and temporal multisensory binding. The mPFC is part of the brain¿s DN, which is deactivated when attention is focused on a particular task and activated on rest when spontaneous cognition emerges. In those with ASD, it is hypoactive and the higher the social impairment the greater the atypical activity. With an immature DN, cross-modal integration is impaired, resulting in a collection of disconnected fragments instead of a coherent global perception. The deficit in MSI may lie in the temporal synchronization of neural networks. The time interval in which the stimulation of one sensory channel could influence another would be higher, preventing integration in the typical shorter time range. Thus, the underconnectivity between distant brain areas would be involved in top-down information processes (relying on global integration of data from different sources) and would enhance low level perception processes such as over focused attention to s

Illusory Memories of Emotionally Charged Words in Autism Spectrum Disorder: Further Evidence for Atypical Emotion Processing Outside the Social Domain

Recent evidence suggests that individuals with ASD may not accumulate distinct representations of emotional information throughout development. On the basis of this observation we predicted that such individuals would not be any less likely to falsely remember emotionally significant as compared to neutral words when such illusory memories are induced by asking participants to study lists of words that are orthographically associated to these words. Our findings showed that typical participants are far less likely to experience illusory memories of emotionally charged as compared to neutral words. Individuals with ASD, on the other hand, did not exhibit this emotional modulation of false memories. We discuss this finding in relation to the role of emotional processing atypicalities in ASD