Table 1:

The 74LV164 is a low-voltage, Si-gate CMOS device and is pin and function compatible with the 74HC164 and 74HCT164. The 74LV164 is an 8-bit edge-triggered shift register with serial data entry and an output from each of the eight stages. Data is entered serially through one of two inputs (DSA or DSB) and either input can be used as an active HIGH enable for data entry through the other input. Both inputs must be connected together or an unused input must be tied HIGH. Data shifts one place to the right on each LOW-to-HIGH transition of the clock input (CP) and enters into Q0, which is the logical AND-function of the two data inputs (DSA and DSB) that existed one set-up time prior to the rising clock edge. A LOW on the master reset input (MR) overrides all other inputs and clears the register asynchronously, forcing all outputs LOW. ■ Wide operating voltage: 1.0 V to 5.5 V ■ Optimized for low-voltage applications: 1.0 V to 3.6 V ■ Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V ■ Typical VOLP (output ground bounce): < 0.8 V at VCC = 3.3 V and Tamb = 25 °C ■ Typical VOHV (output VOH undershoot):> 2 V at VCC = 3.3 V and Tamb = 25 °C ■ Gated serial data inputs ■ Asynchronous master reset ■ ESD protection

Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Q101 compliant � Suitable for standard level gate drive sources � Suitable for thermally demanding environments due to 175 °C ratin

Dynamic characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Higher operating power due to low thermal resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application

Static characteristics

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Allows responsive temperature monitoring due to integrated temperature sensor � Low conduction losses due to low on-state resistance � Q101 compliant 1.3 Applications � 12 V and 24 V high power motor drives � Automotive and general purpose power switchin

Table 1.

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive source

Table 4. Marking codes Type number

1. Product profile 1.1 General description Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients

Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Q101 compliant � Suitable for standard level gate drive sources � Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications � 12 V, 24 V and 42 V load

Static characteristics

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � High efficiency due to low switching and conduction losses � Isolated package � Suitable for standard level gate driv

Dynamic characteristics

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Higher operating power due to low thermal resistance � Low conduction losses due to low on-state resistance � Suitable for logic level gate drive sources 1.3 Applications � DC-to-DC convertor

1.3 Applications

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Higher operating power due to low thermal resistance � Low conduction losses due to low on-state resistance � Simple gate drive required due to low gate charge � Suitable for high frequency applications due to fast switching characteristic