UD Spirit Flags will Show Game Day Pride in University

News release announces that UD spirit flags will be available for purchase to show pride on game days

Design and test of a pulse-width modulator and driver for space-borne GaN switch mode power amplifiers in P-band

In this paper, the design and test of a single-chip RF pulse-width modulator and driver (PWMD) aimed at exciting a high-power class-E GaN high-power stage at 435 MHz is described. For the required buffer size, avoiding potential ringing of the pulses within the buffer structure presents a major challenge in the design process. Therefore, a smaller test chip capable of driving capacitive loads of up to 5 pF was initially designed, fabricated, and tested. An approach based on three-dimensional electromagnetic simulations was used to validate the test results and offers excellent simulation accuracy. Based on the results obtained for test chip an enlarged PWMD chip capable of driving a 40 W high-power stage has been designed and tested on passive loads representing the targeted final stage

A 250 nm CMOS / LDMOS Pulse-Width Modulator and driver for space-borne GaN switch mode power amplifiers in P-Band

In this paper, the design of a single-chip RF Pulse-Width Modulator and Driver (PWMD) aimed at exciting a 80 W class-E GaN high-power stage at 435 MHz is described. For the required buffer size, avoiding potential ringing of the pulses within the buffer structure presents a major challenge in the design process. Therefore, a smaller chip capable of driving capacitive loads of up to 5 pF was initially designed, fabricated and tested. An approach based on 3D EM simulations was used to validate the test results. Based on the presented results, an enlarged chip able to drive a 80 W GaN high-power stage is currently being designed